Datasheet > BAS70

BAS70

更新时间： 2024-11-18 06:41:27

品牌	Logo	应用领域
EIC		小信号肖特基二极管
页数	文件大小	规格书
1页	120K
描述
SMALL SIGNAL SCHOTTKY DIODE, SINGLE & DUAL

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中文翻译

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数据手册

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BAS70 数据手册

TH97/2478

TH09/2479

IATF 0060636

SGS TH07/1033

SMALL SIGNAL SCHOTTKY

DIODE, SINGLE & DUAL

BAS70/-04/-05/-06

SOT-23

PRV : 70 Volts

Io : 200 mA

1.40

0.95

0.50

0.100

0.013

0.35

3.10

2.70

FEATURES :

* These diodes feature very low turn-on voltage

* Fast switching

* These devices are protected by a PN junction

guard ring against excessive voltage, such

as electrostatic discharges

0.19

0.08

1.02

0.89

2.04

1.78

* Pb / RoHS Free

Dimensions in millimeters

MECHANICAL DATA :

* Case : SOT-23 plastic Case

BAS70

BAS70-04

BAS70-05

BAS70-06

* BAS70

Marking Code : 73

* BAS70-04 Marking Code : 74

* BAS70-05 Marking Code : 75

* BAS70-06 Marking Code : 76

MAXIMUM RATINGS AND THERMAL CHARACTERISTICS ( Ta = 25 °C, unless otherwise specified)

Value

Parameter

Symbol

V_RRM

V_RWM

V_R

Unit

Maximum Repetitive Peak Reverse Voltage

Maximum Working Peak Reverse Voltage

Maximum DC Blocking Voltage

200⁽¹⁾

I_F

Maximum Forward Continuous Current

Maximum Peak Forward Surge Current at tp < 1 s

Total Power Dissipation

K/W

°C

600⁽¹⁾

I_FSM

200⁽¹⁾

430⁽¹⁾

P_tot

R_ӨJA

T_J

Thermal Resistance Junction to Ambient Air

Junction Temperature Range

125

T_STG

-65 to +150

Storage Temperature Range

°C

ELECTRICAL CHARACTERISTICS (Ta = 25 °C, unless otherwise specified.

Min.

Typ.

Max.

Unit

Parameter

Test Condition

I_R= 10 µA (pulses)

Symbol

V_(BR)

Reverse Breakdown Voltage

Leakage Current

Forward Voltage

V_R= 50 V

I_R

100

410

I_F= 1.0 mA

V_F

I_F= 15 mA

V_F

(Note 2)

V_R= 0 V, f = 1 MHz

I_F= 10 mA , I_R= 10 mA,

Irr = 1A , R_L= 100 Ω

C_tot

Diode Capacitance

Reverse Recovery Time

1.5

Trr

Notes :

(1) Device on fiberglass substrate

(2) Pulse test tp < 300 µs

Page 1 of 1

Rev. 01 : May 23, 2006

中文翻译

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