Datasheet > BAS40DW-05P

BAS40DW-05P

更新时间： 2024-11-20 03:35:27

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	311K
描述
DIODE 0.2 A, 40 V, 4 ELEMENT, SILICON, SIGNAL DIODE, ULTRA SMALL, PLASTIC PACKAGE-6, Signal Diode

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数据手册

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BAS40DW-05P 数据手册

M C C

BAS40TW/DW-04/

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

DW-05 /DW-06 /BRW

Features

•

Fast Switching

Low Forward Voltage Drop

Low Power Dissipation

Ultra-Small Surface Mount Package

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

200mW

SCHOTTKY BARRIER

Diode

SOT-363

Maximum Ratings

Symbol

Rating

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Output Current

200

R/W

Thermal Resistance Junction to Ambient

Power dissipation

Junction Temperature

625

200

-55 to +125

P_D

T_J

------------R

Storage Temperature

T_STG

-65 to +125

Electrical Characteristics @ 25 C Unless Otherwise Specified

DIMENSIONS

Symbol

Parameter

Min

Max

Test Conditions

V(BR)

Reverse breakdown voltage

-----

I _R= 10µA

40V

INCHES

MIN

DIM

MAX

MIN

0.10

1.15

2.00

MAX

0.30

1.35

2.20

NOTE

.004

.045

.079

.012

.053

.087

V_R=30V

Reverse Voltage Leakage

Current

200nA

I_R

---

.026

0.65Nominal

.012

.071

---

.035

.010

.004

.016

.087

.004

.039

.016

0.30

1.80

---

0.90

0.25

0.10

0.40

2.20

0.10

1.00

0.40

0.25

---

0.38V

1.0V

I_F=1mA

I_F=40mA

V_F

Forward Voltage

C_T

t_rr

Total Capacitance

---

5pF

V_R=0V, f=1MHZ

I_F=10mA,I =I

=1mA

ȍ ^R

=100

Reverse Recovery Time

5.0ns

C₃

A₂

C₁

C₂

C₁

C₂

A₁

C₂

A₂

C₁

A₂

A₁

A₂

A₃

C₁

A₂

A₁

A₂

C₁

C₂

A₁

BAS40TW

Marking: K43

BAS40DW-04

Marking: K44

BAS40BRW

Marking: K47

BAS40DW-06

Marking: K461

BAS40DW-05

Marking: K45

w w w.m c c s e m i.c o m

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Revision: 3

2008/01/01

12 3

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