Datasheet > BAS40E

BAS40E

更新时间： 2024-11-20 14:52:07

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	171K
描述
肖特基二极管

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中文翻译

获取价格

数据手册

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BAS40E 数据手册

BAS40E / -04E / -05E / -06E

Surface Mount Schottky Barrier Diodes

Features

• Low forward voltage

• Fast switching

BAS40E

BAS40-04E

BAS40-05E

BAS40-06E

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

V_R

Value

Unit

Repetitive Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

I_F(AV)

I_FSM

P_D

200

℃

Peak Forward Surge Current (at tp ≤ 8.3 ms)

Power Disspation

600

150

Junction Temperature

T_J

150

Storage Temperature Range

T_Stg

- 65 to + 150

℃

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 10 μA

Forward Voltage

at I_F= 1 mA

at I_F= 40 mA

V_F

0.38

Reverse Current

at V_R= 30 V

I_R

C_T

t_rr

200

Total Capacitance

at V_R= 0 V, f = 1 MHz

Reverse Recovery Time

at I_F= I_R= 10 mA, I_rr= 0.1 I_R

1 / 3

Dated: 31/03/2023 Rev: 02

12 3

中文翻译

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BAS40E6327BTSA1	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, SOT-23, 3-PIN
BAS40E6327HTSA1	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, SOT-23, 3-PIN
BAS40E6327XT	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Element, 0.12A, 40V V(RRM), Silicon, SOT-23, 3-PIN
BAS40E6433	ROCHESTER	获取价格	0.12 A, SILICON, SIGNAL DIODE, SOT-23, 3 PIN
BAS40E6433HTMA1	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Element, 0.12A, Silicon, SOT-23, 3 PIN
BAS40E6433XT	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Element, 0.12A, Silicon, SOT-23, 3 PIN
BAS40G	SWST	获取价格	肖特基二极管
BAS40-G	WEITRON	获取价格	Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM),