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BAS40DW-05-TP PDF预览

BAS40DW-05-TP

更新时间: 2024-11-19 20:57:39
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 240K
描述
Rectifier Diode, Schottky, 4 Element, 0.2A, 40V V(RRM), Silicon, ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-6

BAS40DW-05-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:0.95配置:2 BANKS, COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:4
端子数量:6最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:40 V最大反向恢复时间:0.005 µs
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

BAS40DW-05-TP 数据手册

 浏览型号BAS40DW-05-TP的Datasheet PDF文件第2页浏览型号BAS40DW-05-TP的Datasheet PDF文件第3页 
M C C  
BAS40TW/DW-04/  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
DW-05 /DW-06 /BRW  
Features  
·
·
·
Fast Switching  
Low Forward Voltage Drop  
Low Power Dissipation  
200mW  
SCHOTTKY BARRIER  
Diode  
Ultra-Small Surface Mount Package  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
Halogen free available upon request by adding suffix "-HF"  
SOT-363  
G
Maximum Ratings  
Symbol  
Rating  
Rating  
40  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
C
B
V
Io  
Average Rectified Output Current  
200  
mA  
R/W  
mW  
Thermal Resistance Junction to Ambient  
Power dissipation  
Junction Temperature  
A
H
R
E
625  
200  
-55 to +125  
JA  
PD  
TJ  
------------R  
R
Storage Temperature  
TSTG  
-65 to +125  
M
K
J
D
L
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
DIMENSIONS  
Symbol  
Parameter  
Min  
Max  
Test Conditions  
V(BR)  
Reverse breakdown voltage  
-----  
I R= 10µA  
40V  
INCHES  
MIN  
.006  
.045  
.085  
MM  
DIM  
A
MAX  
MIN  
0.15  
1.15  
2.15  
MAX  
0.35  
1.35  
2.45  
NOTE  
.014  
.053  
.096  
VR=30V  
Reverse Voltage Leakage  
Current  
200nA  
IR  
---  
B
C
D
G
H
J
K
L
M
.026  
0.65Nominal  
.047  
.071  
---  
.055  
.087  
.004  
.043  
.018  
.006  
1.20  
1.80  
---  
0.90  
0.26  
0.08  
1.40  
2.20  
0.10  
1.10  
0.46  
0.15  
---  
---  
0.38V  
1.0V  
IF=1mA  
IF=40mA  
VF  
Forward Voltage  
.035  
.010  
.003  
CT  
trr  
Total Capacitance  
---  
---  
5pF  
VR=0V, f=1MHZ  
IF=10mA,I =I  
F
=1mA  
ȍ R  
RL  
=100  
Reverse Recovery Time  
5.0ns  
AC  
1
AC  
C3  
A2  
C1  
C2  
C1  
C2  
C2  
C2  
A1  
C2  
A2  
C1  
A2  
1
AC  
2
AC  
2
A1  
A2  
A3  
A2  
A1  
C1  
A1  
A2  
C1  
C1  
C2  
A1  
A1  
BAS40TW  
Marking: K43  
BAS40DW-04  
Marking: K44  
BAS40BRW  
Marking: K47  
BAS40DW-06  
Marking: K461  
BAS40DW-05  
Marking: K45  
w w w.m c c s e m i.c o m  
1 of 3  
Revision: B  
2013/01/01  

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