Datasheet > BAS40-07W

BAS40-07W

更新时间： 2024-11-12 06:41:27

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科信 - KEXIN		肖特基二极管开关测试光电二极管
页数	文件大小	规格书
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描述
Silicon Schottky Diode

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中文翻译

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数据手册

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BAS40-07W 数据手册

SMD Type

Diodes

Silicon Schottky Diode

BAS40-07W

SOT-343

Unit: mm

Features

General-purpose diode for high-speed switching

Circuit protection

Voltage clamping

High-level detecting and mixing

Absolute Maxim um Ratings Ta = 25

Param eter

Diode reverse voltage

Forward current

Sym bol

V^R

Value

Unit

I^F

120

m A

I^FRM

Ptot

200

Surge forward current, t

Total power dissipation, T^S

Junction tem perature

10 m s

250

T^j

150

Operating tem perature range

Storage tem perature

Top

-55 to +150

345

Tstg

RthJA

R^thJS

K/W

Junction - am bient

Junction - soldering point

Note

275

1.Package m ounted on epoxy pcb 40m m 40m m 1.5m m / 6cm ²Cu

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)

Test Condition

Min

Typ

Max

Unit

Breakdown voltage

I(BR) = 10

V^R= 30 V

V^R= 40 V

I^F= 1 mA

Reverse current

Forward voltage

I^R

250

350

600

310

450

720

380

500

1000

I^F= 10 mA

I^F= 40 mA

Diode capacitance

C^T

f = 1 MHz; VR = 0

I^F= 25 mA

Charge carrier life time

Differential forward resistance

100

R^F

IF = 10 mA, f = 10 KHz

Marking

47s

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