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BAS19

更新时间: 2024-01-26 08:00:24
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管
页数 文件大小 规格书
10页 201K
描述
High-voltage switching diodeProduction

BAS19 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.6二极管类型:RECTIFIER DIODE
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

BAS19 数据手册

 浏览型号BAS19的Datasheet PDF文件第2页浏览型号BAS19的Datasheet PDF文件第3页浏览型号BAS19的Datasheet PDF文件第4页浏览型号BAS19的Datasheet PDF文件第5页浏览型号BAS19的Datasheet PDF文件第6页浏览型号BAS19的Datasheet PDF文件第7页 
BAS19  
High-voltage switching diode  
22 March 2019  
Product data sheet  
1. General description  
High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD)  
plastic package.  
2. Features and benefits  
High switching speed: trr ≤ 50 ns  
Low leakage current  
Reverse voltage VR ≤ 100 V  
Low capacitance: Cd ≤ 5 pF  
Small SMD plastic package  
AEC-Q101 qualified  
3. Applications  
High-speed switching at high voltage  
High-voltage general-purpose switching  
Voltage clamping  
Reverse polarity protection  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
200  
100  
100  
50  
Unit  
mA  
V
IF  
forward current  
reverse voltage  
reverse current  
continuous  
-
-
-
-
-
-
-
-
VR  
IR  
trr  
VR = 100 V; Tj = 25 °C  
nA  
ns  
reverse recovery time IF = 30 mA; IR = 30 mA; RL = 100 Ω;  
IR(meas) = 3 mA; Tamb = 25 °C  
 
 
 
 

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