Datasheet > BAS16TT1_04

BAS16TT1_04

更新时间： 2024-10-02 03:06:47

品牌	Logo	应用领域
安森美 - ONSEMI		二极管开关
页数	文件大小	规格书
6页	64K
描述
Silicon Switching Diode

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中文翻译

获取价格

数据手册

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BAS16TT1_04 数据手册

BAS16TT1

Preferred Device

Silicon Switching Diode

Features

• Pb−Free Package is Available*

http://onsemi.com

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Max

Unit

CATHODE

ANODE

Continuous Reverse Voltage

Recurrent Peak Forward Current

200

500

Peak Forward Surge Current

FM(surge)

Pulse Width = 10 ms

THERMAL CHARACTERISTICS

Characteristic

CASE 463

SOT−416

STYLE 2

Symbol

Max

Unit

Total Device Dissipation,

FR−4 Board (Note 1)

225

T = 25°C

Derated above 25°C

1.8

mW/°C

°C/W

Thermal Resistance,

555

MARKING DIAGRAM

Junction−to−Ambient (Note 1)

Total Device Dissipation,

FR−4 Board (Note 2)

T = 25°C

360

Derated above 25°C

2.9

mW/°C

°C/W

Thermal Resistance,

345

Junction−to−Ambient (Note 2)

Junction and Storage

Temperature Range

T , T

−55 to

+150

°C

stg

ORDERING INFORMATION

1. FR−4 @ Minimum Pad

†

2. FR−4 @ 1.0 × 1.0 Inch Pad

Device

Package

Shipping

BAS16TT1

SOT−416

3000 / Tape & Reel

BAS16TT1G

SOT−416

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

May, 2004 − Rev. 2

BAS16TT1/D

12 3 4 5 6

中文翻译

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