Datasheet > BAS16TW1T1

BAS16TW1T1

更新时间： 2024-11-18 12:51:15

品牌	Logo	应用领域
威伦 - WILLAS		二极管
页数	文件大小	规格书
3页	368K
描述
SOT-363 Plastic-Encapsulate Diodes

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中文翻译

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BAS16TW1T1 数据手册

WILLAS

BAS16TW1T1

SOT-363 Plastic-Encapsulate Diodes

SWITCHING DIODES

SOT-363

FEATURES

Fast Switching Speed

For General Purpose Switching Applications

High Conductance

Weight:0.05g

RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

Moisture Sensitivity Level 1

MARKING: BAS16TW1T1: KA2·

Maximum Ratings @T_A=25℃

Parameter

Symbol

Limits

Unit

Non-Repetitive Peak reverse voltage

V_RM

100

Peak Repetitive Peak reverse voltage

Working Peak Reverse Voltage

V_RRM

V_RWM

V_R

DC Blocking

Voltage

RMS Reverse Voltage

V_R(RMS)

I_FM

300

Forward Continuous Current

Average Rectified Output Current

Peak forward surge current @=1.0μs

@=1.0s

I_O

150

2.0

I_FSM

1.0

Power Dissipation

R_θJA

T_j

200

K/W

℃

Thermal Resistance Junction to Ambient

Junction temperature

625

150

Storage temperature

T_STG

-65~+150

℃

Electrical Ratings @T_A=25℃

Parameter

Symbol

Min.

Typ.

Max. Unit

Conditions

I_R=10μA

Reverse Breakdown Voltage

V _{(BR) R}

V_F1

V_F2

V_F3

V_F4

I_R1

0.715

0.855

1.0

1.25

I_F=1mA

I_F=10mA

Forward voltage

I_F=50mA

I_F=150mA

μA

V_R=75V

Reverse current

I_R2

V_R=20V

Capacitance between terminals

Reverse Recovery Time

C_T

V_R=0V,f=1MHz

I_F=I_R=10mA

Irr=0.1XI_R,R_L=100Ω

t_rr

2012-12

WILLAS ELECTRONIC CORP.

12 3

中文翻译

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