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BAS16TW (KAS16TW) PDF预览

BAS16TW (KAS16TW)

更新时间: 2024-11-18 18:09:35
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描述
Switching Diodes

BAS16TW (KAS16TW) 数据手册

  
SMD Type  
Transistors  
Switching Diodes  
BAS16TW (KAS16TW)  
Features  
Fast Switching Speed  
For General Purpose Switching Applications.  
High Conductance  
6
1
5
2
4
3
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Reverse Voltage  
Symbol  
Rating  
100  
Unit  
V
V
RM  
RRM  
RWM  
Peak Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
75  
V
V
R
RMS Reverse Voltage  
V
R(RMS)  
53  
150  
Average Rectified Output Current  
Forward Continuous Current  
Peak Forward Surge Current @ t=1us  
@ t =1s  
IO  
mA  
A
I
FM  
300  
2
I
FSM  
1
Power Dissipation  
Pd  
200  
mW  
Thermal Resistance Junction to Ambient  
Junction Temperature  
R
θJA  
625  
/W  
T
J
150  
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
75  
Typ  
Max Unit  
0.715  
Reverse breakdown voltage  
V
R
I
I
I
I
I
R= 100 uA  
V
V
V
V
F1  
F2  
F3  
F4  
F
F
F
F
= 1mA  
V
= 10 mA  
= 50 mA  
= 150 mA  
0.855  
Forward voltage  
1
1.25  
1
I
I
R1  
R2  
V
V
V
R
R
R
= 75 V  
uA  
nA  
pF  
ns  
Reverse voltage leakage current  
=20 V  
25  
2
Junction capacitance  
Reverse recovery time  
Cj  
= 0 V, f= 1 MHz  
=10mA,Irr=0.1xI  
t
rr  
I
F
=I  
R
R, R  
L
=100Ω  
4
Marking  
Marking  
KA2  
1
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