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BAS16TW_R2_00001 PDF预览

BAS16TW_R2_00001

更新时间: 2024-11-21 01:09:47
品牌 Logo 应用领域
强茂 - PANJIT 开关测试光电二极管
页数 文件大小 规格书
5页 108K
描述
SURFACE MOUNT SWITCHING DIODES

BAS16TW_R2_00001 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:GREEN, PLASTIC PACKAGE-6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.06配置:SEPARATE, 3 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.715 VJESD-30 代码:R-PDSO-G6
元件数量:3端子数量:6
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.2 W
最大重复峰值反向电压:100 V最大反向电流:2.5 µA
最大反向恢复时间:0.004 µs反向测试电压:75 V
子类别:Other Diodes表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAS16TW_R2_00001 数据手册

 浏览型号BAS16TW_R2_00001的Datasheet PDF文件第2页浏览型号BAS16TW_R2_00001的Datasheet PDF文件第3页浏览型号BAS16TW_R2_00001的Datasheet PDF文件第4页浏览型号BAS16TW_R2_00001的Datasheet PDF文件第5页 
BAS16TW/BAW56DW/BAV70DW/BAV99S  
SURFACE MOUNT SWITCHING DIODES  
100 Volt  
VOLTAGE  
POWER  
200mWatt  
FEATURES  
• Fast switching speed.  
• Surface mount package Ideally Suited for Automatic insertion  
• High Conductance  
• Lead free in compliance with EU RoHS 2011/65/EU directive  
• Green molding compound as per IEC61249 Std. . (Halogen Free)  
MECHANICAL DATA  
• Case: SOT-363, Plastic  
Terminals: Solderable per MIL-STD-750, Method 2026  
• Approx. Weight: 0.0002 ounces, 0.006 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25OC ambient temperature unless otherwise specified. For capacitive load, derate current by 20%.  
PARAMETER  
SYMBOL BAS16TW BAW56DW BAV70DW  
BAV99S  
JB  
UNITS  
-
Marking Code  
-
16T  
JC  
JA  
Reverse Voltage  
Peak Reverse Voltage  
VR  
VRM  
75  
100  
150  
4
V
V
Rectified Current (Average),Half Wave Rectification With  
Resistive Load and f>50Hz  
I
mA  
A
O
Peak Forward Surge Current, 1μs  
I
FSM  
Power Dissipation Derate Above 25OC  
PTOT  
200  
mW  
0.715@I F=0.001A  
0.855@I F=0.01A  
1@I F=0.05A  
Maximum Forward Voltage  
VF  
V
1.25@I F=0.15A  
Maximum DC Reverse Current at 25V  
75V  
0.03  
2.5  
I
μA  
pF  
R
Maximum Junction Capacitance (Note 1)  
Maximum Reverse Recovery Time (Note 2)  
Typical Thermal Resistance  
CJ  
TRR  
1.5  
4
ns  
RθJA  
625  
OC / W  
OC  
Operating Junction and Storage Temperature Range  
Circuit Figure  
TJ,TSTG  
-55 to +150  
Fig.48  
Fig.51  
Fig.52  
Fig.32  
NOTE : 1. Reverse Bias Voltage = 0. f=1MHz  
2. I F=10mA to I R=1mA. VR=6V. Load=100Ω  
May 26,2016­REV.04  
PAGE . 1  

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