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BAR88-02V PDF预览

BAR88-02V

更新时间: 2024-11-08 22:24:07
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
6页 477K
描述
Silicon PIN Diode

BAR88-02V 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SC-79
包装说明:R-PDSO-F2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.72
其他特性:LOW DISTORTION应用:SWITCHING
最小击穿电压:80 V配置:SINGLE
最大二极管电容:0.4 pF标称二极管电容:0.35 pF
二极管元件材料:SILICON最大二极管正向电阻:2.5 Ω
二极管电阻测试电流:1 mA二极管电阻测试频率:100 MHz
二极管类型:PIN DIODE频带:L BAND
JESD-30 代码:R-PDSO-F2少数载流子标称寿命:0.5 µs
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.25 W认证状态:Not Qualified
反向测试电压:子类别:PIN Diodes
表面贴装:YES技术:POSITIVE-INTRINSIC-NEGATIVE
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAR88-02V 数据手册

 浏览型号BAR88-02V的Datasheet PDF文件第2页浏览型号BAR88-02V的Datasheet PDF文件第3页浏览型号BAR88-02V的Datasheet PDF文件第4页浏览型号BAR88-02V的Datasheet PDF文件第5页浏览型号BAR88-02V的Datasheet PDF文件第6页 
BAR88...  
Silicon PIN Diode  
Optimized for low current antenna switches  
in hand held applications  
Very low forward resistance  
(typ. 1.5 @ I = 1 mA)  
F
Low capacitance at zero volt reverse bias  
at frequencies above 1 GHz (typ. 0.28 pF)  
Very low signal distortion  
BAR88-02L  
BAR88-02V  
BAR88-07L4  
BAR88-099L4  
4
3
4
3
D
1
D
2
D
1
D
2
1
2
1
2
1
2
Type  
Package  
TSLP-2-1  
SC79  
TSLP-4-4  
TSLP-4-4  
Configuration  
single, leadless  
single  
parallel pair, leadless  
anti-parallel pair, leadless  
L (nH) Marking  
S
BAR88-02L  
BAR88-02V  
BAR88-07L4*  
BAR88-099L4*  
0.4  
UU  
U
0.6  
0.4  
0.4  
UT  
US  
* Preliminary Data  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Diode reverse voltage  
Forward current  
Symbol  
V
R
Value  
80  
100  
Unit  
V
mA  
mW  
I
F
Total power dissipation  
P
tot  
BAR88-02L, -07L4, -099L4 T 133°C  
250  
250  
150  
s
BAR88-02V, T 123°C  
s
°C  
Junction temperature  
T
j
Operating temperature range  
Storage temperature  
T
-55 ... 125  
-55 ... 150  
op  
T
stg  
Dec-08-2003  
1

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