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BAR9002ELSE6327XTSA1 PDF预览

BAR9002ELSE6327XTSA1

更新时间: 2024-02-06 08:35:12
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
10页 717K
描述
Pin Diode,

BAR9002ELSE6327XTSA1 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:20 weeks风险等级:1.7
二极管类型:PIN DIODEJESD-609代码:e4
湿度敏感等级:1峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Gold (Au)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BAR9002ELSE6327XTSA1 数据手册

 浏览型号BAR9002ELSE6327XTSA1的Datasheet PDF文件第2页浏览型号BAR9002ELSE6327XTSA1的Datasheet PDF文件第3页浏览型号BAR9002ELSE6327XTSA1的Datasheet PDF文件第4页浏览型号BAR9002ELSE6327XTSA1的Datasheet PDF文件第5页浏览型号BAR9002ELSE6327XTSA1的Datasheet PDF文件第6页浏览型号BAR9002ELSE6327XTSA1的Datasheet PDF文件第7页 
BAR90...  
Silicon Deep Trench PIN Diodes  
Optimized for low bias current antenna  
switches in hand held applications  
Very low capacitance at zero volt  
reverse bias at frequencies  
above 1GHz (typ. 0.19 pF)  
Low forward resistance  
(typ. 1.3 @ I = 3 mA)  
F
Improved ON / OFF mode harmonic  
distortion balance  
Pb-free (RoHS compliant) package  
BAR90-02EL  
BAR90-098LRH  
BAR90-02ELS  
4
3
D1  
D2  
1
2
1
2
Type  
BAR90-02ELS  
BAR90-02EL  
Package  
TSSLP-2-3 single, leadless  
TSLP-2-19 single, leadless  
Configuration  
L (nH) Marking  
S
0.2  
0.4  
0.4  
J*  
X
T9  
BAR90-098LRH  
TSLP-4-7  
anti-parallel pair, leadless  
* Marking of TSSLP-2-3 with underline  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Diode reverse voltage  
Forward current  
Symbol  
Value  
80  
100  
Unit  
V
mA  
mW  
V
R
I
F
Total power dissipation  
P
tot  
T 137 °C, BAR90-02ELS  
150  
250  
150  
S
T 133°C, all others  
S
°C  
Junction temperature  
T
j
Operating temperature range  
Storage temperature  
T
T
-55 ... 125  
-55 ... 150  
op  
stg  
2013-06-10  
1

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