Datasheet > BAR90-07L4E6327

BAR90-07L4E6327

更新时间： 2022-12-01 19:06:58

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	183K
描述
Diode,

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BAR90-07L4E6327 数据手册

BAR90...

Silicon Deep Trench PIN Diodes

• Optimized for low bias current antenna switches

in hand held applications

• Very low capacitance at zero volt reverse bias

at frequencies above 1GHz (typ. 0.19pF)

• Low forward resistance (typ. 1.3Ω @ I = 3mA)

• Improved ON / OFF mode harmonic

distortion balance

BAR90-02L

BAR90-07L4

BAR90-098L4

BAR90-099L4

BAR90-02LRH

BAR90-07LRH

BAR90-098LRH

BAR90-099LRH

Type

Package

TSLP-2-1

TSLP-2-7

TSLP-4-4

TSLP-4-7

TSLP-4-4

TSLP-4-7

TSLP-4-4

TSLP-4-7

Configuration

single, leadless

L (nH) Marking

BAR90-02L*

0.4

BAR90-02LRH*

BAR90-07L4*

0.4

parallel pair, leadless

BAR90-07LRH*

BAR90-098L4*

BAR90-098LRH*

BAR90-099L4*

BAR90-099LRH*

anti-parallel pair, leadless

* Preliminary data

Maximum Ratings at T = 25°C, unless otherwise specified

Parameter

Symbol

Value

Unit

Diode reverse voltage

Forward current

100

250

Total power dissipation

tot

T ≤ 133°C

150

°C

Junction temperature

Operating temperature range

Storage temperature

-55 ... 125

-55 ... 150

stg

Nov-02-2004

12 3 4 5 6 7...11

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