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BAR63V-03W-GS08 PDF预览

BAR63V-03W-GS08

更新时间: 2024-11-25 06:41:27
品牌 Logo 应用领域
威世 - VISHAY PIN二极管测试光电二极管衰减器
页数 文件大小 规格书
5页 132K
描述
RF PIN Diode - Single in SOT-323

BAR63V-03W-GS08 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.21应用:ATTENUATOR
最小击穿电压:50 V配置:SINGLE
最大二极管电容:0.3 pF标称二极管电容:0.28 pF
二极管元件材料:SILICON最大二极管正向电阻:2 Ω
二极管电阻测试电流:5 mA二极管电阻测试频率:100 MHz
二极管类型:PIN DIODE频带:S BAND
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
少数载流子标称寿命:0.115 µs湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
反向测试电压:子类别:PIN Diodes
表面贴装:YES技术:POSITIVE-INTRINSIC-NEGATIVE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BAR63V-03W-GS08 数据手册

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BAR63V-03W  
Vishay Semiconductors  
RF PIN Diode - Single in SOT-323  
Description  
2
3
Characterized by a very low reverse Capacitance the  
PIN Diode BAR63V-03W was designed for RF signal  
tuning. As a function of the forward bias current the  
forward resistance (rf) can be adjusted to less than  
1 while the low reverse capacitance offers a high  
isolation. Typical applications for this PIN Diodes are  
wireless, mobile and TV-systems.  
1
1
2
18375  
3
Features  
• Low forward resistance  
• Very small reverse capacitance  
e3  
• Lead (Pb)-free component  
Mechanical Data  
Case: SOT-323 Plastic case  
Weight: approx. 6.0 mg  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Applications  
For frequency up to 3 GHz  
RF-signal tuning  
Mobile, wireless and TV-Applications  
Parts Table  
Part  
Ordering code  
Marking  
Remarks  
Tape and Reel  
BAR63V-03W  
BAR63V-03W-GS18 or BAR63V-03W-GS08  
CW3  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Reverse voltage  
Test condition  
Symbol  
VR  
Value  
Unit  
V
50  
100  
Forward current  
IF  
Tj  
mA  
°C  
Junction temperature  
Storage temperature range  
150  
Tstg  
- 55 to + 150  
°C  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
IR = 10 µA  
R = 35 V  
F = 100 mA  
Symbol  
Min  
50  
Typ.  
Max  
Unit  
V
Reverse voltage  
Reverse current  
Forward voltage  
Diode capacitance  
VR  
IR  
V
10  
nA  
V
I
VF  
CD  
CD  
1.2  
f = 1 MHz, VR = 0  
0.28  
0.23  
pF  
pF  
f = 1 MHz, VR = 5 V  
0.3  
Document Number 85697  
Rev. 1.3, 15-Apr-05  
www.vishay.com  
1

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