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BAR63V-04W PDF预览

BAR63V-04W

更新时间: 2024-11-25 06:41:27
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 127K
描述
RF PIN Diodes - Dual, Series in SOT-323

BAR63V-04W 数据手册

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BAR63V-04W  
Vishay Semiconductors  
VISHAY  
RF PIN Diodes - Dual, Series in SOT-323  
Description  
Characterized by a very low reverse Capacitance the  
PIN Diode BAR63V-04W was designed for RF signal  
tuning. As a function of the forward bias current the  
forward resistance (rf) can be adjusted to less than  
1 while the low reverse capacitance offers a high  
2
3
1
1
2
18379  
isolation. Typical applications for this PIN Diodes are  
3
wireless, mobile and TV-systems.  
Features  
• Low forward resistance  
• Very small reverse capacitance  
Applications  
Mechanical Data  
For frequency up to 3 GHz  
Case: Plastic case (SOT-323)  
RF-signal tuning  
Weight: approx. 6.0 mg  
Mobile , wireless and TV-Applications  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
BAR63V-04W-GS18 or BAR63V-04W-GS08  
Marking  
Remarks  
Tape and Reel  
BAR63V-04W  
CW4  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Symbol  
Value  
Unit  
V
Reverse voltage  
V
50  
100  
R
Forward current  
I
mA  
°C  
F
Junction temperature  
Storage temperature range  
T
150  
j
T
- 55 to + 150  
°C  
stg  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
= 10 µA  
Symbol  
Min  
50  
Typ.  
Max  
Unit  
V
Reverse voltage  
Reverse current  
Forward voltage  
Diode capacitance  
I
V
R
R
V
= 35 V  
I
10  
nA  
V
R
R
I
= 100 mA  
V
C
C
1.2  
F
F
D
D
f = 1 MHz, V = 0  
0.28  
0.23  
pF  
pF  
R
f = 1 MHz, V = 5 V  
0.3  
R
Document Number 85698  
Rev. 1.2, 26-Apr-04  
www.vishay.com  
1

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