Datasheet > BAR64-02W

BAR64-02W

更新时间： 2024-11-25 12:53:47

品牌	Logo	应用领域
TYSEMI		射频衰减器二极管开关测试光电二极管高压
页数	文件大小	规格书
1页	59K
描述
High voltage current controlled RF resistor for RF attenuator and switches

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中文翻译

获取价格

数据手册

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BAR64-02W 数据手册

Product specification

BAR64-02W

SOD-523

Unit: mm

0.6

+0.1

-0.1

+0.1

-0.1

1.2

Features

High voltage current controlled RF resistor for RF attenuator and switches

Frequency range above 1 MHz

Low resistance and short carrier lifetime

Very low inductance

+0.1

-0.1

1.6

0.77max

For frequencies up to 3 GHz

Extremely small plastic SMD package

A b so lu te M a xim u m R a tin g s T a = 2 5

P a ra m e te r

D io d e re ve rs e vo lta g e

S ym b o l

V ^R

V a lu e

2 0 0

U n it

F o rw a rd c u rre n t

I^F

1 0 0

m A

m W

P ^{to t}

T ^j

2 5 0

T o ta l p o w e r d is s ip a tio n ,

J u n c tio n te m p e ra tu re

T ^S

1 2 5

1 5 0

O p e ra tin g te m p e ra tu re ra n g e

S to ra g e te m p e ra tu re

J u n c tio n - a m b ie n t (N o te 1 )

J u n c tio n - s o ld e rin g p o in t

N o te

T ^{o p}

-5 5 to + 1 5 0

2 2 0

T ^stg

R th JA

R ^{th JS}

K /W

1 4 0

1 .P a c k a g e m o u n te d o n a lu m in a 1 5 m m

1 6 .7 m m

0 .7 m m

Electrical Characteristics Ta = 25

Parameter

Breakdown voltage

Forward voltage

Symbol

V^R

Test Condition

I^(BR)= 5

Min

200

Typ

Max

Unit

V^F

I^F= 50 mA

V^R= 20 V, f = 1 MHz

f = 1 MHz

1.1

Diode capacitance

Case capacitance

C^T

0.23

0.09

12.5

2.1

0.35

C^C

I^F= 1 mA, f = 100 MHz

I^F= 10 mA, f = 100 MHz

I^F= 100 mA, f = 100 MHz

I^F= 10 mA, I^R= 6 mA,I^R= 3 mA

3.8

Forward resistance

r^f

0.85

1.55

0.6

1.35

Charge carrier life time

Series inductance

t^rr

Marking

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

中文翻译

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