Datasheet > BAR63V-04-GS18

BAR63V-04-GS18

更新时间： 2024-11-25 06:41:27

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
5页	116K
描述
RF PIN Diodes - Dual, Series in SOT-23

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BAR63V-04-GS18 数据手册

BAR63V-04

Vishay Semiconductors

RF PIN Diodes - Dual, Series in SOT-23

Description

Characterized by a very low reverse Capacitance the

PIN Diode BAR63V-04 was designed for RF signal

tuning. As a function of the forward bias current the

forward resistance (rf) can be adjusted to less than

1 Ω while the low reverse capacitance offers a high

isolation. Typical applications for this PIN Diodes are

wireless, mobile and TV-systems.

18256

Features

• Low forward resistance

• Very small reverse capacitance

• Lead (Pb)-free component

Mechanical Data

Case: SOT-23 Plastic case

Weight: approx. 8.1 mg

• Component in accordance to

RoHS 2002/95/EC and WEEE 2002/96/EC

Packaging Codes/Options:

GS18 / 10 k per 13" reel (8 mm tape), 10 k/box

GS08 / 3 k per 7" reel (8 mm tape), 15 k/box

Applications

For frequency up to 3 GHz

RF-signal tuning

Mobile, wireless and TV-Applications

Parts Table

Part

Ordering code

BAR63V-04-GS18 or BAR63V-04-GS08

Marking

Remarks

Tape and Reel

BAR63V-04

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Reverse voltage

Test condition

Symbol

V_R

Value

Unit

100

Forward current

I_F

T_j

°C

Junction temperature

Storage temperature range

150

T_stg

- 55 to + 150

°C

Electrical Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

I_R= 10 µA

_R= 35 V

Symbol

Min

Typ.

Max

Unit

Reverse voltage

Reverse current

Forward voltage

Diode capacitance

V_R

I_R

I_F= 100 mA

V_F

C_D

1.2

f = 1 MHz, V_R= 0

f = 1 MHz, V_R= 5 V

0.28

0.23

0.3

Document Number 85691

Rev. 1.3, 15-Apr-05

www.vishay.com

12 3 4 5

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BAR63V-05W-GS08	VISHAY	获取价格	Pin Diode, 50V V(BR)
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