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BAR63-03WE6327 PDF预览

BAR63-03WE6327

更新时间: 2024-11-21 14:47:59
品牌 Logo 应用领域
英飞凌 - INFINEON 开关测试光电二极管
页数 文件大小 规格书
16页 1042K
描述
Pin Diode, 50V V(BR), Silicon,

BAR63-03WE6327 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.05
应用:SWITCHING最小击穿电压:50 V
配置:SINGLE最大二极管电容:0.3 pF
标称二极管电容:0.25 pF二极管元件材料:SILICON
最大二极管正向电阻:2 Ω二极管电阻测试电流:5 mA
二极管电阻测试频率:100 MHz二极管类型:PIN DIODE
频带:S BANDJESD-30 代码:R-PDSO-G2
少数载流子标称寿命:0.075 µs湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.25 W
认证状态:Not Qualified反向测试电压:5 V
子类别:PIN Diodes表面贴装:YES
技术:POSITIVE-INTRINSIC-NEGATIVE端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

BAR63-03WE6327 数据手册

 浏览型号BAR63-03WE6327的Datasheet PDF文件第2页浏览型号BAR63-03WE6327的Datasheet PDF文件第3页浏览型号BAR63-03WE6327的Datasheet PDF文件第4页浏览型号BAR63-03WE6327的Datasheet PDF文件第5页浏览型号BAR63-03WE6327的Datasheet PDF文件第6页浏览型号BAR63-03WE6327的Datasheet PDF文件第7页 
BAR63...  
Silicon PIN Diodes  
PIN diode for high speed  
switching of RF signals  
Very low forward resistance (low insertion loss)  
Very low capacitance (high isolation)  
For frequencies up to 3GHz  
Pb-free (RoHS compliant) package  
1)  
Qualified according AEC Q101  
BAR63-02..  
BAR63-03W  
BAR63-04  
BAR63-05  
BAR63-06  
BAR63-04W  
BAR63-05W  
BAR63-06W  
3
3
3
D
2
D
2
1
2
D
1
D
1
D
1
D
2
1
2
1
2
1
2
Type  
Package  
TSLP-2-1  
SC79  
SCD80  
SOD323  
SOT23  
SOT323  
SOT23  
SOT323  
SOT23  
Configuration  
single, leadless  
single  
single  
single  
series  
series  
common cathode  
common cathode  
common anode  
common anode  
L (nH) Marking  
S
BAR63-02L*  
BAR63-02V  
BAR63-02W  
BAR63-03W  
BAR63-04  
BAR63-04W  
BAR63-05  
BAR63-05W  
BAR63-06  
BAR63-06W  
1
0.4  
0.6  
0.6  
1.8  
1.8  
1.4  
1.8  
1.4  
1.8  
1.4  
G
G
GG  
white G  
G4s  
G4s  
G5s  
G5s  
G6s  
G6s  
SOT323  
*BAR63-02L is not qualified according AEC Q101  
2011-07-18  
1

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