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BAR63-05 PDF预览

BAR63-05

更新时间: 2024-11-24 22:39:23
品牌 Logo 应用领域
英飞凌 - INFINEON PIN二极管开关测试光电二极管
页数 文件大小 规格书
4页 84K
描述
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

BAR63-05 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.06Is Samacsys:N
应用:SWITCHING最小击穿电压:50 V
配置:COMMON CATHODE, 2 ELEMENTS最大二极管电容:0.3 pF
标称二极管电容:0.25 pF二极管元件材料:SILICON
最大二极管正向电阻:2 Ω二极管电阻测试电流:10 mA
二极管类型:PIN DIODE频带:S BAND
JESD-30 代码:R-PDSO-G3少数载流子标称寿命:0.075 µs
湿度敏感等级:1元件数量:2
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.25 W认证状态:Not Qualified
反向测试电压:5 V子类别:PIN Diodes
表面贴装:YES技术:POSITIVE-INTRINSIC-NEGATIVE
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAR63-05 数据手册

 浏览型号BAR63-05的Datasheet PDF文件第2页浏览型号BAR63-05的Datasheet PDF文件第3页浏览型号BAR63-05的Datasheet PDF文件第4页 
BAR 63...  
Silicon PIN Diode  
PIN diode for high speed switching of RF signals  
Low forward resistance  
Very low capacitance  
For frequencies up to 3 GHz  
1)  
Type  
Marking  
Ordering code  
(tape and reel)  
Package  
SOT-23  
Pin configuration  
1
2
3
BAR 63  
G3  
G4  
G5  
G6  
Q62702-A1036  
Q62702-A1037  
Q62702-A1038  
Q62702-A1039  
A
A
A
C
-
C
BAR 63-04  
BAR 63-05  
BAR 63-06  
C
A
C
C/A  
C/C  
A/A  
Maximum ratings  
Parameter  
Symbol  
VR  
BAR 63  
50  
Unit  
V
Reverse voltage  
Forward current  
IF  
100  
mA  
mW  
Total Power dissipation TS 80°C  
BAR 63-04,-05,-06 TS 55°C  
Ptot  
250  
250  
Operating temperature range  
Storage temperature range  
Top  
-55 +150°C  
-55...+150°C  
°C  
°C  
Tstg  
Thermal resistance  
1)  
Junction-ambient  
Rth JA  
K/W  
BAR63  
450  
540  
BAR 63-04,-05,-06  
Junction-soldering point  
BAR64  
Rth JS  
280  
380  
BAR63-04,-05,-06  
_________________________  
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm  
Semiconductor Group  
1
Edition A01, 23.02.95  

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