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BA159DGP-E3/23 PDF预览

BA159DGP-E3/23

更新时间: 2024-11-26 03:29:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 85K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

BA159DGP-E3/23 数据手册

 浏览型号BA159DGP-E3/23的Datasheet PDF文件第2页浏览型号BA159DGP-E3/23的Datasheet PDF文件第3页浏览型号BA159DGP-E3/23的Datasheet PDF文件第4页 
BA157GP thru BA159GP  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
FEATURES  
• Superectifier structure for High Reliability  
condition  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current, typical I less than 0.1 µA  
R
• High forward surge capability  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602,  
brazed-lead assembly  
by Patent No. 3,930,306  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
DO-204AL (DO-41)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For general purpose of medium frequency rectification.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
400 V to 1000 V  
20 A  
MECHANICAL DATA  
Case: DO-204AL, molded epoxy over glass body  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
150 ns, 250 ns, 500 ns  
5.0 µA  
IR  
VF  
1.3 V  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Tj max.  
175 °C  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
BA157GP  
BA158GP  
600  
BA159DGP  
800  
BA159GP  
1000  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
400  
V
V
V
VRMS  
280  
420  
560  
700  
Maximum DC blocking voltage  
VDC  
400  
600  
800  
1000  
Maximum average forward rectified current 0.375" (9.5 mm)  
lead length at TA = 55 °C  
IF(AV)  
1.0  
A
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
20  
- 65 to + 175  
A
Operating junction and storage temperature range  
TJ, TSTG  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL BA157GP BA158GP BA159DGP BA159GP  
UNIT  
Maximum instantaneous forward voltage at 1.0 A  
VF  
1.3  
V
Maximum DC reverse current at rated DC  
blocking voltage  
TA = 25 °C  
IR  
5.0  
µA  
at IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
Maximum reverse recovery time  
Typical junction capacitance  
trr  
150  
250  
500  
500  
ns  
at 4.0 V, 1 MHz  
CJ  
15  
pF  
Document Number 88537  
26-Apr-06  
www.vishay.com  
1

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