5秒后页面跳转
BA159DGP-HE3 PDF预览

BA159DGP-HE3

更新时间: 2024-10-01 19:57:47
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 321K
描述
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode

BA159DGP-HE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.4
其他特性:HIGH RELIABILITY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:20 A
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向恢复时间:0.5 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BA159DGP-HE3 数据手册

 浏览型号BA159DGP-HE3的Datasheet PDF文件第2页浏览型号BA159DGP-HE3的Datasheet PDF文件第3页浏览型号BA159DGP-HE3的Datasheet PDF文件第4页 
BA157GP thru BA159GP  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
400 V to 1000 V  
20 A  
®
150 ns, 250 ns, 500 ns  
5.0 µA  
IR  
*
d
VF  
1.3 V  
e
t
n
e
t
Tj max.  
175 °C  
a
P
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602,  
DO-204AL (DO-41)  
brazed-lead assembly  
by Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
condition  
Case: DO-204AL, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current, typical I less than 0.1 µA  
R
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For general purpose of medium frequency rectifi-  
action  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbols BA157GP BA158GP BA159DGP BA159GP Units  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum RMS voltage  
Maximum DC blocking voltage  
1000  
Maximum average forward rectified current 0.375" (9.5 mm) lead  
length at TA = 55 °C  
IF(AV)  
1.0  
20  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ,TSTG  
- 65 to + 175  
°C  
Document Number 88537  
19-Sep-05  
www.vishay.com  
1

与BA159DGP-HE3相关器件

型号 品牌 获取价格 描述 数据表
BA159DGPHE3/54 VISHAY

获取价格

DIODE GEN PURP 800V 1A DO204AL
BA159DGP-HE3/54 VISHAY

获取价格

DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN,
BA159DGPHE3/73 VISHAY

获取价格

DIODE GEN PURP 800V 1A DO204AL
BA159DGP-HE3/73 VISHAY

获取价格

DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN,
BA159DS LGE

获取价格

Fast Recovery Rectifiers
BA159DZ WTE

获取价格

FAST RECOVERY RECTIFIER
BA159-E2 VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
BA159-E3 VISHAY

获取价格

Fast Switching Plastic Rectifier
BA159-E3/54 VISHAY

获取价格

Diode Switching 1KV 1A 2-Pin DO-204AL T/R
BA159-E3/73 VISHAY

获取价格

Diode Switching 1KV 1A 2-Pin DO-204AL Ammo