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BA159DGPHE3/54 PDF预览

BA159DGPHE3/54

更新时间: 2024-11-25 22:04:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 66K
描述
DIODE GEN PURP 800V 1A DO204AL

BA159DGPHE3/54 数据手册

 浏览型号BA159DGPHE3/54的Datasheet PDF文件第2页浏览型号BA159DGPHE3/54的Datasheet PDF文件第3页浏览型号BA159DGPHE3/54的Datasheet PDF文件第4页 
BA157GP, BA158GP, BA159DGP, BA159GP  
www.vishay.com  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Plastic Rectifier  
FEATURES  
SUPERECTIFIER®  
• Superectifier structure for high reliability condition  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current, typical IR less than 0.1 μA  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
DO-41 (DO-204AL)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
IF(AV)  
1.0 A  
For general purpose of medium frequency rectification.  
VRRM  
400 V, 600 V, 800 V, 1000 V  
MECHANICAL DATA  
IFSM  
20 A  
150 ns, 250 ns, 500 ns  
5.0 μA  
Case: DO-41 (DO-204AL), molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
trr  
IR  
VF  
1.3 V  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJ max.  
175 °C  
E3 suffix meets JESD 201 class 1A whisker test  
Package  
DO-41 (DO-204AL)  
Single  
Polarity: color band denotes cathode end  
Circuit configuration  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL BA157GP  
BA158GP BA159DGP BA159GP UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
1000  
Maximum average forward rectified current 0.375" (9.5 mm)  
lead length at TA = 55 °C  
IF(AV)  
1.0  
20  
A
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
-65 to +175  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS SYMBOL BA157GP  
BA158GP BA159DGP BA159GP UNIT  
Maximum instantaneous forward voltage 1.0 A  
VF  
IR  
1.3  
5.0  
V
Maximum DC reverse current  
at rated DC blocking voltage  
TA = 25 °C  
μA  
IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
Maximum reverse recovery time  
Typical junction capacitance  
trr  
150  
250  
500  
500  
ns  
4.0 V, 1 MHz  
CJ  
15  
pF  
Revision: 29-Apr-2020  
Document Number: 88537  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

BA159DGPHE3/54 替代型号

型号 品牌 替代类型 描述 数据表
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