Datasheet > B40C800GE4

B40C800GE4

更新时间： 2024-11-07 14:47:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	200K
描述
DIODE 0.9 A, 65 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE WOG, 4 PIN, Bridge Rectifier Diode

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中文翻译

获取价格

技术参数
数据手册

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B40C800GE4 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	LEAD FREE, PLASTIC, CASE WOG, 4 PIN
针数：	4	Reach Compliance Code：	unknown
风险等级：	5.6	Is Samacsys：	N
Base Number Matches：	1

B40C800GE4 数据手册

B40C800G thru B380C800G

Vishay General Semiconductor

Glass Passivated Single-Phase Bridge Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

I_R

0.9 A

65 V to 600 V

45 A

Case Style WOG

10 µA

V_F

1.0 V

T_jmax.

125 °C

Features

Mechanical Data

• Ideal for printed circuit boards

• High case dielectric strength

• High surge current capability

Case: WOG

Epoxy meets UL-94V-0 Flammability rating

Terminals: Silver plated (E4 Suffix) leads, solderable

per J-STD-002B and JESD22-B102D

• Typical I less than 0.1 µA

Polarity: As marked on body

• Solder Dip 260 °C, 40 seconds

Typical Applications

General purpose use in ac-to-dc bridge full wave rec-

tification for Power Supply, Adapter, Charger, Light-

ing Ballaster on Consumers and Home Appliances

applications

Maximum Ratings

Ratings at 25 °C ambient temperature unless otherwise specified.

Parameter

Symbols

B40

B80

B125

B250

B380

Units

C800G C800G C800G C800G C800G

Maximum repetitive peak reverse voltage

Maximum RMS input voltage R + C-load

V_RRM

V_RMS

I_F(AV)

125

200

125

400

250

600

380

Maximum average forward output current for

free air operation at T_A= 45 °C

R + L-load

C-Load

0.9

0.8

Maximum non-repetitive peak voltage

Maximum DC blocking voltage

V_RSM

V_DC

100

200

125

180

350

200

300

600

400

600

1000

600

Maximum peak working voltage

V_RWM

I_FRM

I_FSM

900

Maximum repetitive peak forward surge current

Peak forward surge current single sine wave on rated load

Rating for fusing at T_J= 125 °C (t < 100 ms)

I²t

R_t

A²sec

Minimum series resistor C-load at V_RMS

Maximum load capacitance

10 %

1.0

2.0

4.0

8.0

Ω

+ 50 %

- 10 %

C_L

5000

2500

1000

500

200

µF

Operating junction temperature range

Storage temperature range

T_J

- 40 to + 125

- 40 to + 150

°C

T_STG

Document Number 88534

08-Jul-05

www.vishay.com

12 3 4

中文翻译

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与B40C800GE4相关器件

型号	品牌	获取价格	描述	数据表
B40C800G-E4	VISHAY	获取价格	DIODE 0.9 A, 65 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE WOG, 4 PIN, B
B40C800G-E4/51	VISHAY	获取价格	DIODE 0.9 A, 65 V, SILICON, BRIDGE RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, CASE WOG, 4 P
B40C800-LF	WTE	获取价格	暂无描述
B40C800W	MICRO-ELECTRONICS	获取价格	Bridge Rectifier Diode, 1 Phase, 1A, 90V V(RRM), Silicon, CASE R-6, 4 PIN
B40CL100S05	INFINEON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 40A, 1000V V(RRM), Silicon, POWER MODULE-3
B40CL100S05PBF	INFINEON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 40A, 1000V V(RRM), Silicon, POWER MODULE-3
B40CL100S10	INFINEON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 40A, 1000V V(RRM), Silicon, POWER MODULE-3
B40CL100S10PBF	INFINEON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 40A, 1000V V(RRM), Silicon, POWER MODULE-3
B40CL10S02	INFINEON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 40A, 100V V(RRM), Silicon, POWER MODULE-3
B40CL10S02PBF	INFINEON	获取价格	40A, 100V, SILICON, RECTIFIER DIODE, POWER MODULE-3

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