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B40C800G-E4/51

更新时间： 2024-11-07 14:37:39
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 87K
描述
DIODE 0.9 A, 65 V, SILICON, BRIDGE RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, CASE WOG, 4 PIN, Bridge Rectifier Diode

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B40C800G-E4/51 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active包装说明：O-PBCY-W4
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：2.13Is Samacsys：N
最小击穿电压：65 V外壳连接：ISOLATED
配置：BRIDGE, 4 ELEMENTS二极管元件材料：SILICON
二极管类型：BRIDGE RECTIFIER DIODE最大正向电压 (VF)：1 V
JESD-30 代码：O-PBCY-W4JESD-609代码：e4
最大非重复峰值正向电流：45 A元件数量：4
相数：1端子数量：4
最高工作温度：125 °C最低工作温度：-40 °C
最大输出电流：0.9 A封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
峰值回流温度（摄氏度）：NOT APPLICABLE认证状态：Not Qualified
最大重复峰值反向电压：65 V子类别：Bridge Rectifier Diodes
表面贴装：NO端子面层：Silver (Ag)
端子形式：WIRE端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT APPLICABLEBase Number Matches：1

B40C800G-E4/51 数据手册

 浏览型号B40C800G-E4/51的Datasheet PDF文件第2页浏览型号B40C800G-E4/51的Datasheet PDF文件第3页浏览型号B40C800G-E4/51的Datasheet PDF文件第4页 
B40C800G, B80C800G, B125C800G, B250C800G, B380C800G  
www.vishay.com  
Vishay Semiconductors  
Glass Passivated Single-Phase Bridge Rectifier  
FEATURES  
• Ideal for printed circuit boards  
• High case dielectric strength  
+
~
e4  
• High surge current capability  
~
+
• Typical IR less than 0.1 μA  
~
−
−
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
Case Style WOG  
• Material categorization: For definitions of  
compliance please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
Package  
WOG  
0.9 A  
General purpose use in AC/DC bridge full wave rectification  
for power supply, adapter, charger, lighting ballaster on  
consumers, and home appliances applications.  
IF(AV)  
VRRM  
IFSM  
65 V, 125 V, 200 V, 400 V, 600 V  
45 A  
10 ꢀA  
1.0 V  
IR  
MECHANICAL DATA  
VF at IF = 0.9 A  
TJ max.  
Case: WOG  
125 °C  
Quad  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E4 - RoHS-compliant, commercial grade  
Diode variations  
Terminals: Silver plated leads, solderable per  
J-STD-002 and JESD22-B102  
Polarity: As marked on body  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
B40  
C800G  
B80  
C800G  
B125  
C800G  
B250  
C800G  
B380  
C800G  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS input voltage R- and C-load  
VRRM  
VRMS  
65  
40  
125  
80  
200  
125  
0.9  
0.8  
350  
200  
300  
10  
400  
250  
600  
380  
V
V
R- and L-load  
C-load  
Maximum average forward output current  
for free air operation at TA = 45 °C  
IF(AV)  
A
Maximum non-repetitive peak voltage  
Maximum DC blocking voltage  
Maximum peak working voltage  
VRSM  
VDC  
VRWM  
IFRM  
IFSM  
I2t  
100  
65  
200  
125  
180  
600  
400  
600  
1000  
600  
V
V
90  
900  
V
Maximum repetitive peak forward surge current  
Peak forward surge current single sine-wave on rated load  
Rating for fusing at TJ = 125 °C (t < 100 ms)  
A
45  
A
A2s  
10  
Minimum series resistor C-load at VRMS  
=
10 ꢁ  
RT  
1.0  
2.0  
4.0  
8.0  
12  
+ 50 ꢁ  
- 10 ꢁ  
Maximum load capacitance  
CL  
5000  
2500  
1000  
500  
200  
ꢀF  
Operating junction temperature range  
Storage temperature range  
TJ  
- 40 to + 125  
- 40 to + 150  
°C  
°C  
TSTG  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
B40  
C800G  
B80  
C800G  
B125  
B250  
C800G  
B380  
C800G  
PARAMETER  
TEST CONDITIONS SYMBOL  
UNIT  
V
C800G  
Maximum instantaneous forward  
voltage drop per diode  
0.9 A  
VF  
IR  
1.0  
10  
Maximum reverse current at rated  
repetitive peak voltage per diode  
ꢀA  
Revision: 08-Jul-13  
Document Number: 88534  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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