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B38C800DM-E3 PDF预览

B38C800DM-E3

更新时间: 2024-10-27 06:39:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 97K
描述
Glass Passivated Ultrafast Bridge Rectifier

B38C800DM-E3 数据手册

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B40C800DM thru B380C800DM  
Vishay General Semiconductor  
Glass Passivated Ultrafast Bridge Rectifier  
FEATURES  
• Ideal for automated placement  
• High surge current capability  
• Solder dip 260 °C, 40 s  
• Component in accordance to  
~
~
RoHS 2002/95/EC and WEEE 2002/96/EC  
~
~
TYPICAL APPLICATIONS  
General purpose use in ac-to-dc bridge full wave  
rectification for SMPS, lighting ballaster, adapter,  
battery charger, home appliances, office equipment,  
and telecommunication applications.  
Case Style DFM  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
Case: DFM  
Epoxy meets UL 94V-0 flammability rating  
IF(AV)  
0.9 A  
VRRM  
IFSM  
IR  
65 V to 600 V  
45 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
10 µA  
E3 suffix for commercial grade, meets JESD 201 class  
1A whisker test  
VF  
1.0 V  
TJ max.  
125 °C  
Polarity: As marked on body  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
B40  
B80  
B125  
B250  
B380  
PARAMETER  
SYMBOL  
UNIT  
C800DM C800DM C800DM C800DM C800DM  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
65  
40  
125  
80  
200  
125  
400  
250  
600  
380  
V
V
Maximum RMS input voltage R- and C-load  
Maximum average forward output current R- and L-load  
0.9  
0.8  
IF(AV)  
A
for free air operation at TA = 45 °C  
Maximum DC blocking voltage  
C-load  
VDC  
VRWM  
VRSM  
IFRM  
IFSM  
I2t  
65  
90  
125  
180  
200  
200  
300  
350  
10  
400  
600  
650  
600  
900  
V
V
Maximum peak working voltage  
Maximum non-repetitive peak voltage  
100  
1000  
V
Maximum repetitive peak forward surge current  
Peak forward surge current single sine-wave on rated load  
Rating for fusing at TJ = 125 °C (t < 100 ms)  
A
45  
A
A2s  
10  
Minimum series resistor C-load at VRMS  
=
10 %  
RT  
1.0  
2.0  
4.0  
8.0  
12  
Ω
+ 50 %  
- 10 %  
Maximum load capacitance  
CL  
5000  
2500  
1000  
500  
200  
µF  
Operating junction temperature range  
Storage temperature range  
TJ  
- 40 to + 125  
- 40 to + 150  
°C  
°C  
TSTG  
Document Number: 88533  
Revision: 29-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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