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B38C800DM-E3/45 PDF预览

B38C800DM-E3/45

更新时间: 2024-10-27 06:39:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 88K
描述
Glass Passivated Ultrafast Bridge Rectifier

B38C800DM-E3/45 数据手册

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B40C800DM thru B380C800DM  
Vishay General Semiconductor  
Glass Passivated Ultrafast Bridge Rectifier  
FEATURES  
• UL Recognition, file number E54214  
• Ideal for automated placement  
• High surge current capability  
• Solder Dip 260 °C, 40 seconds  
~
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
~
~
~
TYPICAL APPLICATIONS  
General purpose use in ac-to-dc bridge full wave  
rectification for SMPS, Lighting Ballaster, Adapter,  
Battery Charger, Home Appliances, Office Equipment,  
and Telecommunication applications.  
Case Style DFM  
MAJOR RATINGS AND CHARACTERISTICS  
MECHANICAL DATA  
Case: DFM  
IF(AV)  
VRRM  
IFSM  
IR  
0.9 A  
65 V to 600 V  
45 A  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade  
10 µA  
VF  
1.0 V  
Tj max.  
125 °C  
Polarity: As marked on body  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
B40  
B80  
B125  
B250  
B380  
PARAMETER  
SYMBOL  
UNIT  
C800DM C800DM C800DM C800DM C800DM  
Maximum repetitive peak reverse voltage  
Maximum RMS input voltage R + C-load  
VRRM  
VRMS  
65  
40  
125  
80  
200  
125  
400  
250  
600  
380  
V
V
Maximum average forward output current  
for free air operation at TA = 45 °C  
R + L-load  
C-load  
0.9  
0.8  
A
IF(AV)  
VDC  
VRWM  
VRSM  
IFRM  
IFSM  
I2t  
Maximum DC blocking voltage  
Maximum peak working voltage  
Maximum non-repetitive peak voltage  
65  
90  
125  
180  
200  
200  
300  
350  
10  
400  
600  
650  
600  
900  
V
V
V
100  
1000  
Maximum repetitive peak forward surge current  
Peak forward surge current single sine wave on rated load  
Rating for fusing at Tj = 125 °C (t < 100 ms)  
A
45  
A
10  
A2sec  
Minimum series resistor C-load at VRMS  
Maximumloadcapacitance  
=
10 %  
+ 50 %  
- 10 %  
RT  
1.0  
2.0  
4.0  
8.0  
12  
Ω
CL  
5000  
2500  
1000  
500  
200  
µF  
Operating junction temperature range  
Storage temperature range  
TJ  
- 40 to + 125  
- 40 to + 150  
°C  
°C  
TSTG  
Document Number 88533  
09-Oct-06  
www.vishay.com  
1

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