B120-M3, B130-M3, B140-M3, B150-M3, B160-M3
www.vishay.com
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AC (SMA)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
Note
•
VRRM
IFSM
20 V, 30 V, 40 V, 50 V, 60 V
30 A
These devices are not AEC-Q101 qualified
VF
0.52 V, 0.75 V
125 °C, 150 °C
DO-214AC (SMA)
Single die
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - RoHS-compliant, commercial grade
TJ max.
Package
Diode variation
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B120
B12
20
B130
B13
30
B140
B150
B15
50
B160
B16
60
UNIT
Device marking code
B14
Maximum repetitive peak reverse voltage
VRRM
IF(AV)
40
V
A
Maximum average forward rectified current (fig. 1)
1.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Voltage rate of change (rated VR)
dV/dt
TJ
10 000
V/μs
°C
Operating junction temperature range
-65 to +125
-65 to +150
Storage temperature range
TSTG
-65 to +150
°C
Revision: 09-Dec-13
Document Number: 89926
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000