Datasheet > B130NH02L

B130NH02L

更新时间： 2024-09-13 02:52:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		转换器
页数	文件大小	规格书
13页	322K
描述
N-CHANNEL 24V - 0.0034 з - 120A DPAK/TO-220 STripFET⑩ III POWER MOSFET FOR DC-DC CONVERSION

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B130NH02L 数据手册

STB130NH02L

STP130NH02L

N-CHANNEL 24V - 0.0034 Ω - 120A D²PAK/TO-220

STripFET™ III POWER MOSFET FOR DC-DC CONVERSION

Table 1: General Features

Figure 1:Package

TYPE

DSS

DS(on)

(2)

STB130NH02L

STP130NH02L

24 V

< 0.0044 Ω

90 A

■

TYPICAL R_DS(on) = 0.0034 Ω @ 10 V

TYPICAL R_DS(on) = 0.005 Ω @ 5 V

R_DS(ON)* Qg INDUSTRY’s BENCHMARK

CONDUCTION LOSSES REDUCED

SWITCHING LOSSES REDUCED

LOW THRESHOLD DEVICE

D PAK

TO-263

(Suffix “T4”)

TO-220

SURFACE-MOUNTING D²PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

The STB_P130NH02L utilizes the latest advanced

design rules of ST’s proprietary STripFET™ technology.

It is ideal in high performance DC-DC converter

applications where efficiency is to be achieved at very

high output currents.

Figure 2: Internal Schematic Diagram

APPLICATIONS

■

SYNCHRONOUS RECTIFICATIONS FOR

TELECOM AND COMPUTER

OR-ING DIODE

■

Table 2: Ordering Information

SALES TYPE

STB130NH02LT4

STP130NH02L

MARKING

B130NH02L

P130NH02L

PACKAGE

TO-263

TO-220

PACKAGING

TAPE & REEL

TUBE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage Rating

Value

Unit

spike(1)

Drain-source Voltage (V = 0)

DGR

Drain-gate Voltage (R = 20 kΩ)

Gate- source Voltage

± 20

(2)

Drain Current (continuous) at T = 25°C

(2)

Drain Current (continuous) at T = 100°C

(3)

Drain Current (pulsed)

360

150

Total Dissipation at T = 25°C

W/°C

tot

Derating Factor

(4)

Single Pulse Avalanche Energy

Storage Temperature

900

stg

-55 to 175

Rev. 2.0

°C

Max. Operating Junction Temperature

April 2005

1/13

12 3 4 5 6 7...13

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