Datasheet > AVSMBG10CA

AVSMBG10CA

更新时间： 2024-11-02 03:39:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	116K
描述
Trans Voltage Suppressor Diode, 600W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-215AA, PLASTIC PACKAGE-2

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AVSMBG10CA 数据手册

AVSMBJ5.0A thru AVSMBJ170A, CA e3 and

AVSMBG5.0A thru AVSMBG170A, CA, e3

SURFACE MOUNT 600 Watt

Transient Voltage Suppressor

S C O T T S D A L E D I V I S I O N

DESCRIPTION

PACKAGE

This AVSMBJ5.0A-170A or AVSMBG5.0A-170A series of surface mount 600 W Transient

Voltage Suppressors (TVSs) protects a variety of voltage-sensitive components from

destruction or degradation. It is available in J-bend design (AVSMBJ) with the DO-214AA

package for greater PC board mounting density or in a Gull-wing design (AVSMBG) in the

DO-215AA for visible solder connections.

It is available in both unidirectional and

bidirectional configurations with an A or CA suffix part number as well as RoHS Compliant

designated by an “e3”suffix. Their clamping response time is virtually instantaneous. As a

result, they can be used for protection from ESD or EFT per IEC61000-4-2 and IEC61000-

4-4, or for inductive switching environments and induced RF protection. They can also

protect from secondary lightning effects per IEC61000-4-5 and class levels defined herein.

Microsemi also offers numerous other TVS products to meet higher and lower power

demands and special applications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS



Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD

and EFT protection respectively



Selections for 5.0 to 170 volts standoff voltages (V_WM)

100% screened as follows for avionics applications:

1. Temperature Cycle (thermal shock) 20 Cycles -55°C to 125°C

2. Solder Capability: Stress Tested at 260°C for 10 sec.

3. Surge 1 pulse at 110% Ipp (Both Directions for Bidirectional)

4. Surge 1 pulse at 100% Ipp (Both Directions for Bidirectional)

5. Electrical Test

Secondary lightning protection per IEC61000-4-5 with 42

Ohms source impedance:

Class 1: AVSMB 5.0 to AVSMB 120A or CA

Class 2: AVSMB 5.0 to AVSMB 60A or CA

Class 3: AVSMB 5.0 to AVSMB 30A or CA

Class 4: AVSMB 5.0 to AVSMB 15A or CA

6. Burn-in (HTRB) 48 hrs 125°C Polarity A for Bidirectional (96 hrs

for Unidirectional)



Secondary lightning protection per IEC61000-4-5 with 12

Ohms source impedance:

7. Electrical Test Delta I_Dand V_(BR)Polarity A

Class 1: AVSMB 5.0 to AVSMB 36A or CA

Class 2: AVSMB 5.0 to AVSMB 18A or CA

8. Burn-in (HTRB) 48 hrs 125°C Polarity B for bidirectional (not

required for Unidirectional)



Compliant to RTCA/DO-160E Waveform 4, Levels 1 & 2

9. Electrical Test Delta I_Dand V_(BR)Polarity B (Not required for

Unidirectional)

Compliant to RTCA/DO-160E Waveform 4, Level 3 for

AVSMB5.0 to AVSMB20A or CA

10. Electrical Test GO-NO-GO



Compliant to RTCA/DO-160E Waveform 4, Level 4 for

AVSMB5.0 to AVSMB7.5



RoHS Compliant devices available and designated by

adding an “e3” suffix

Economical surface mount design in both J-bend or Gull-wing

terminations.



Compliant to RTCA/DO-160E Waveform 5A, Level 1

Compliant to RTCA/DO-160E Waveform 5A, Level 2 for

AVSMB5.0 to AVSMB6.0A or CA

Protects sensitive components such as IC’s, CMOS, Bipolar,

BiCMOS, ECL, DTL, T²L, etc.

Protection from switching transients & induced RF

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

2-Stage: Robust, High Reliability Lead Frame



Peak Pulse Power dissipation at 25^ºC: 600 watts at 10/1000 μs



(also see Fig 1,2, and 3)

CASE: Void-free transfer molded thermosetting epoxy

body meeting UL94V-0



Impulse repetition rate (duty factor): 0.01%

t_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional



TERMINALS: Gull-wing or C-bend (modified J-bend)

leads Tin-Lead or RoHS compliant annealed matte-Tin

plating solderable per MIL-STD-750, method 2026



Operating and Storage temperature: -65^ºC to +150^ºC

Thermal resistance: 25 ^ºC/W junction to lead or 90^ºC/W junction

to ambient when mounted on FR4 PC board (1oz Cu) with

recommended footprint (see last page)

Steady-State Power dissipation: 5 watts at T_L= 25^oC, or 1.38

watts at T_A= 25^ºC when mounted on FR4 PC board with

recommended footprint



POLARITY: Cathode indicated by band. No band on bi-

directional devices.



MARKING: See Page 2 marking column.



TAPE & REEL option: Standard per EIA-481-1-A with 12

mm tape, 750 per 7 inch reel or 2500 per 13 inch reel.



WEIGHT: 0.1 grams



Forward Surge at 25ºC: 100 amps peak impulse of 8.3 ms half-

sine wave (unidirectional only)



See package dimension on last page



Solder temperatures: 260 ^ºC for 10 s (maximum)

1-29-2008 REV D; AVSMB5-170

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与AVSMBG10CA相关器件

型号	品牌	获取价格	描述	数据表
AVSMBG10CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
AVSMBG11A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
AVSMBG11AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
AVSMBG11CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
AVSMBG11CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
AVSMBG12A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
AVSMBG12AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
AVSMBG12CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
AVSMBG12CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
AVSMBG16A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

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