ATP101
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--30
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0V
(BR)DSS
D GS
I
V
V
=--30V, V =0V
--1
A
A
μ
DSS
DS
GS
I
=±16V, V =0V
DS
±10
μ
GSS
GS
V
(off)
|
V
=--10V, I =--1mA
--1.2
--2.6
V
GS
yfs
DS D
Forward Transfer Admittance
V
I
=--10V, I =--13A
D
17
S
|
DS
R
R
(on)1
(on)2
=--13A, V =--10V
GS
23
36
30
51
m
Ω
Ω
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=--7A, V =--4.5V
GS
m
Input Capacitance
Ciss
875
220
155
9.2
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
pF
pF
ns
DS
t
t
t
t
(on)
d
r
70
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
80
ns
d
f
70
ns
Total Gate Charge
Qg
18.5
3.2
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--15V, V =--10V, I =--25A
GS
DS
D
4.0
V
SD
I =--25A, V =0V
S GS
--0.99
--1.5
Switching Time Test Circuit
V = --15V
DD
V
IN
0V
--10V
I
= --13A
D
V
IN
R =1.15Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
ATP101
P. G
50Ω
S
Ordering Information
Device
Package
ATPAK
Shipping
3,000pcs./reel
memo
ATP101-TL-H
Pb Free and Halogen Free
No.A1646-2/7