Datasheet > ATP103-TL-H

ATP103-TL-H

更新时间： 2024-01-25 10:07:16

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	338K
描述
P 沟道，功率 MOSFET，-30V，-55A，13mΩ

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ATP103-TL-H 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.33
Base Number Matches：	1

ATP103-TL-H 数据手册

Ordering number : ENA1623A

ATP103

P-Channel Power MOSFET

http://onsemi.com

–

30V, 55A, 13m , Single ATPAK

Features

•

Low ON-resistance

Slim package

Halogen free compliance

Large current

4.5V drive

Protection diode in

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

--30

Unit

DSS

±20

GSS

--55

Drain Current (PW 10 s)

PW 10 s, duty cycle 1%

--165

≤

Allowable Power Dissipation

Channel Temperature

Tc=25 C

°C

Tch

150

Storage Temperature

Tstg

--55 to +150

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

--28

Note : 1 V = 10V, L=100 H, I = 28A

-- --

2 L 100 H, Single pulse

≤

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: ATPAK

7057-001

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

ATP103-TL-H

1.5

Packing Type: TL

Marking

6.5

4.6

2.6

0.4

ATP103

LOT No.

Electrical Connection

4,2

0.55

0.8

0.6

1 : Gate

2 : Drain

0.4

2.3

3 : Source

4 : Drain

ATPAK

Semiconductor Components Industries, LLC, 2013

July, 2013

61312 TKIM/D0209PA TKIM TC-00002144 No. A1623-1/7

12 3 4 5 6 7

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