是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | ROHS COMPLIANT, PLASTIC PACKAGE-4 | Reach Compliance Code: | unknown |
HTS代码: | 8541.60.00.50 | 风险等级: | 5.82 |
其他特性: | TAPE AND REEL | 晶体/谐振器类型: | PARALLEL - FUNDAMENTAL |
驱动电平: | 10 µW | 频率稳定性: | 0.005% |
频率容差: | 50 ppm | JESD-609代码: | e5 |
负载电容: | 20 pF | 安装特点: | SURFACE MOUNT |
标称工作频率: | 11.0592 MHz | 最高工作温度: | 70 °C |
最低工作温度: | -20 °C | 物理尺寸: | L12.5XB4.6XH3.7 (mm)/L0.492XB0.181XH0.146 (inch) |
串联电阻: | 50 Ω | 表面贴装: | YES |
端子面层: | Tin/Zinc/Copper (Sn/Zn/Cu) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ATP111SMT | CTS |
获取价格 |
Parallel - Fundamental Quartz Crystal, 11.0592MHz Nom | |
ATP112 | SANYO |
获取价格 |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
ATP112_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
ATP112TL | ONSEMI |
获取价格 |
Power Field-Effect Transistor, 25A I(D), 60V, 0.043ohm, 1-Element, P-Channel, Silicon, Met | |
ATP112-TL | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,25A I(D),TO-252VAR | |
ATP112-TL-H | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
ATP113 | SANYO |
获取价格 |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
ATP113_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
ATP113-TL | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,35A I(D),TO-252VAR | |
ATP113-TL-H | SANYO |
获取价格 |
General-Purpose Switching Device Applications |