生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.3 | 雪崩能效等级(Eas): | 100 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 55 A |
最大漏源导通电阻: | 0.016 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 165 A | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
ATP114_12 | SANYO | General-Purpose Switching Device Applications |
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|
ATP114-TL-H | SANYO | General-Purpose Switching Device Applications |
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|
ATP115SM | CTS | Surface Mount Quartz Crystal |
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|
ATP115SM-1 | CTS | Parallel - Fundamental Quartz Crystal, 11.52MHz Nom, ROHS COMPLIANT, PLASTIC PACKAGE-4 |
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|
ATP120D-01CGM | AAC | RF POWER ATTENUATOR |
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|
ATP120D-01DGM | AAC | RF POWER ATTENUATOR |
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