Ordering number : ENA1755A
ATP113
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
60V, 35A, 29.5m , Single ATPAK
Features
•
•
•
ON-resistance R (on)1=22.5m (typ.)
4V drive
Protection diode in
Input Capacitance Ciss=2400pF(typ.)
Halogen free compliance
Ω
DS
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
--60
±20
--35
--105
50
DSS
V
V
GSS
I
A
D
Drain Current (PW 10 s)
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
W
°C
°C
mJ
A
°
D
Tch
150
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
95
AS
I
--18
AV
--
--
AV
Note : 1 V = 10V, L=500 H, I = 18A
*
μ
DD
2 L 500 H, Single pulse
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: ATPAK
7057-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ATP113-TL-H
1.5
6.5
4.6
2.6
Packing Type: TL
Marking
0.4
0.4
4
ATP113
LOT No.
TL
Electrical Connection
2,4
2
0.55
1
3
0.8
0.6
1 : Gate
0.4
2.3
2.3
2 : Drain
3 : Source
4 : Drain
1
ATPAK
3
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/72110PA TKIM TC-00002330 No. A1755-1/7