Datasheet > ATP112_12

ATP112_12

更新时间： 2022-05-17 02:29:10

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
7页	481K
描述
General-Purpose Switching Device Applications

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ATP112_12 数据手册

ATP112

Ordering number : ENA1754A

SANYO Sem iconductors

DATA S HEET

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

ATP112

Features

•

ON-resistance R (on)1=33m (typ.)

4V drive

Protection diode in

Input Capacitance Ciss=1450pF(typ.)

Halogen free compliance

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

--60

DSS

±20

GSS

--25

Drain Current (PW 10 s)

PW 10 s, duty cycle 1%

--75

≤

Allowable Power Dissipation

Channel Temperature

Tc=25 C

150

°C

Tch

Storage Temperature

Tstg

--55 to +150

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

--13

Note : 1 V = 10V, L=500 H, I = 13A

2 L 500 H, Single pulse

≤

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: ATPAK

7057-001

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

ATP112-TL-H

1.5

6.5

4.6

2.6

Packing Type: TL

Marking

0.4

ATP112

LOT No.

Electrical Connection

2,4

0.55

0.8

0.6

1 : Gate

0.4

2.3

2 : Drain

3 : Source

4 : Drain

SANYO : ATPAK

http://semicon.sanyo.com/en/network

62012 TKIM/72110PA TKIM TC-00002329

No. A1754-1/7

12 3 4 5 6 7

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