Ordering number : ENA1646A
ATP101
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
30V, 25A, 30m , Single ATPAK
Features
•
•
•
•
Low ON-resistance
Slim package
Halogen free compliance
Large current
4.5V drive
Protection diode in
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--30
Unit
V
V
DSS
V
±20
V
GSS
I
--25
A
D
Drain Current (PW 10 s)
I
DP
PW 10 s, duty cycle 1%
--75
A
≤
μ
≤
μ
≤
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
30
W
°C
°C
mJ
A
°
D
Tch
150
Storage Temperature
Tstg
--55 to +150
25
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
AS
I
AV
--13
Note : 1 V = 10V, L=200 H, I = 13A
-- --
*
μ
DD
2 L 200 H, Single pulse
AV
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: ATPAK
7057-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ATP101-TL-H
1.5
Packing Type: TL
Marking
6.5
4.6
2.6
0.4
0.4
ATP101
4
LOT No.
TL
Electrical Connection
4,2
2
0.55
1
3
0.8
0.6
1 : Gate
2 : Drain
0.4
2.3
2.3
1
3 : Source
4 : Drain
3
ATPAK
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/12710PA TKIM TC-00002233 No. A1646-1/7