Datasheet > ATP101-TL-H

ATP101-TL-H

更新时间： 2024-01-19 05:38:51

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
7页	337K
描述
P-Channel Power MOSFET, -30V, -25A, 30mΩ

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技术参数
数据手册

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ATP101-TL-H 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.33
Is Samacsys：	N	Base Number Matches：	1

ATP101-TL-H 数据手册

ATP101

at Ta=25°C

Electrical Characteristics

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

--30

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=--1mA, V =0V

(BR)DSS

D GS

=--30V, V =0V

--1

DSS

=±16V, V =0V

±10

GSS

(off)

=--10V, I =--1mA

--1.2

--2.6

yfs

DS D

Forward Transfer Admittance

=--10V, I =--13A

(on)1

(on)2

=--13A, V =--10V

Static Drain-to-Source On-State Resistance

=--7A, V =--4.5V

Input Capacitance

Ciss

875

220

155

9.2

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Coss

Crss

=--10V, f=1MHz

(on)

See speciﬁed Test Circuit.

Turn-OFF Delay Time

Fall Time

(off)

Total Gate Charge

18.5

3.2

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Qgs

Qgd

=--15V, V =--10V, I =--25A

4.0

I =--25A, V =0V

S GS

--0.99

--1.5

Switching Time Test Circuit

V = --15V

--10V

= --13A

R =1.15Ω

OUT

PW=10μs

D.C.≤1%

ATP101

P. G

50Ω

Ordering Information

Device

Package

ATPAK

Shipping

3,000pcs./reel

memo

ATP101-TL-H

Pb Free and Halogen Free

No. A1646-2/7

123 4 5 6 7

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