ATP103
Ordering number : ENA1623A
SANYO Sem iconductors
DATA S HEET
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ATP103
Features
•
•
Low ON-resistance
Large current
•
•
Slim package
4.5V drive
•
•
Halogen free compliance
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
--30
±20
--55
--165
50
DSS
V
V
GSS
I
A
D
Drain Current (PW 10 s)
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
W
°C
°C
mJ
A
°
D
Tch
150
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
57
AS
I
--28
AV
Note : 1 V = 10V, L=100 H, I = 28A
-- --
*
μ
DD
2 L 100 H, Single pulse
AV
*
≤
μ
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: ATPAK
7057-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ATP103-TL-H
1.5
Packing Type: TL
Marking
6.5
4.6
2.6
0.4
0.4
ATP103
4
LOT No.
TL
Electrical Connection
4,2
2
0.55
1
3
0.8
0.6
1 : Gate
2 : Drain
0.4
2.3
2.3
1
3 : Source
4 : Drain
3
SANYO : ATPAK
http://semicon.sanyo.com/en/network
61312 TKIM/D0209PA TKIM TC-00002144
No.A1623-1/7