ATF-551M4-TR2G

更新时间： 2024-01-16 05:50:23

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体晶体管放大器
页数	文件大小	规格书
24页	198K
描述
暂无描述

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ATF-551M4-TR2G 数据手册

ATF-551M4 Typical Performance Curves, continued

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

-40°C

25°C

85°C

-40°C

25°C

85°C

-40°C

25°C

85°C

FREQUENCY (GHz)

Figure 21. Gain vs. Temperature and

Frequency with Bias at 2.7V, 10 mA^[1]

Figure 22. Fmin vs. Temperature and

Frequency with Bias at 2.7V, 10 mA^[2]

Figure 23. OIP3 vs. Temperature and

Frequency with Bias at 2.7V, 10 mA^[1]

-40°C

25°C

85°C

-40°C

25°C

85°C

-5

-10

FREQUENCY (GHz)

Figure 24. IIP3 vs. Temperature and

Frequency with Bias at 2.7V, 10 mA^[1]

Figure 25. P1dB vs. Temperature and

Frequency with Bias at 2.7V, 10 mA^[1]

Notes:

1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2.7 V, 10

mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test board

requirements. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at

the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.

2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the drain

current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in higher P1dB

and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As

an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached.

1...4 5 678 9 10...24

下载PDF

与ATF-551M4-TR2G相关器件

型号	品牌	描述	获取价格	数据表
ATF-58143	AGILENT	Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package	获取价格
ATF-58143-BLK	AGILENT	Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package	获取价格
ATF-58143-BLKG	AGILENT	Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package	获取价格
ATF-58143-TR1	AGILENT	Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package	获取价格
ATF-58143-TR1G	AGILENT	Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package	获取价格
ATF-58143-TR2	AGILENT	Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package	获取价格