ATF-551M4-TR2G

更新时间： 2024-02-11 10:36:40

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体晶体管放大器
页数	文件大小	规格书
24页	198K
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ATF-551M4-TR2G 数据手册

ATF-551M4 Electrical Specifications

T_A= 25°C, RF parameters measured in a test circuit for a typical device

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

Vgs

Vth

Idss

Operational Gate Voltage

Threshold Voltage

Vds = 2.7V, Ids = 10 mA

Vds = 2.7V, Ids = 2 mA

Vds = 2.7V, Vgs = 0V

0.3

0.47

0.37

0.1

0.65

0.53

0.18

—

Saturated Drain Current

Transconductance

µA

Vds = 2.7V, gm = ∆Idss/∆Vgs;

∆Vgs = 0.75 –0.7 = 0.05V

mmho

110

220

285

Igss

Gate Leakage Current

Vgd = Vgs = -2.7V

µA

—

Noise Figure^[1]

f = 2 GHz

Vds = 2.7V, Ids = 10 mA

Vds = 3V, Ids = 20 mA

—

0.5

0.9

—

Gain

Gain ^[1]

f = 2 GHz

Vds = 2.7V, Ids = 10 mA

Vds = 3V, Ids = 20 mA

15.5

—

17.5

18.0

18.5

—

OIP3

Output 3^rdOrder

Intercept Point^[1]

Vds = 2.7V, Ids = 10 mA

Vds = 3V, Ids = 20 mA

dBm

—

24.1

30.0

—

P1dB

Notes:

1dB Compressed

Output Power^[1]

Vds = 2.7V, Ids = 10 mA

Vds = 3V, Ids = 20 mA

dBm

—

14.6

16.0

—

1. Measurements obtained using production test board described in Figure 5. Typical values were determined from a sample size of 398 parts from

4 wafers.

50Ω Input

Transmission

Line Including

Gate Bias T

(0.3 dB loss)

Input

Output

50Ω Output

Transmission

Line Including

Gate Bias T

Input

Output

Matching Circuit

Γ_mag = 0.3

Γ_ang = 11°

(0.3 dB loss)

Matching Circuit

Γ_mag = 0.3

Γ_ang = 9°

DUT

(0.9 dB loss)

(0.3 dB loss)

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a

trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-

embedded from actual measurements.

ATF-551M4 Electrical Specifications (see notes 2 and 3, as indicated)

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

Fmin

Minimum Noise Figure^[2]f = 900 GHz

Vds = 2.7V, Ids = 10 mA

—

0.27

0.41

0.61

0.88

—

f = 2 GHz

f = 3.9 GHz

f = 5.8 GHz

Associated Gain ^[2]

f = 900 GHz

f = 2 GHz

f = 3.9 GHz

f = 5.8 GHz

Vds = 2.7V, Ids = 10 mA

—

21.8

17.9

14.2

12.0

—

OIP3

Output 3^rdOrder

Intercept Point^[3]

f = 900 GHz

f = 3.9 GHz

f = 5.8 GHz

Vds = 2.7V, Ids = 10 mA

dBm

—

22.1

24.3

24.5

—

P1dB

1dB Compressed

Output Power^[3]

f = 900 GHz

f = 3.9 GHz

f = 5.8 GHz

Vds = 2.7V, Ids = 10 mA

dBm

—

14.3

14.5

14.3

—

Notes:

2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

3. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at the

output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.

1 234 5 6 7...24

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