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AT65609EHV-DJ40SR PDF预览

AT65609EHV-DJ40SR

更新时间: 2024-01-08 01:27:06
品牌 Logo 应用领域
爱特美尔 - ATMEL 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
16页 842K
描述
Standard SRAM, 128KX8, 40ns, CMOS, PDFP32, 0.400 INCH, FLATPACK-32

AT65609EHV-DJ40SR 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:DFP, FL32,.4Reach Compliance Code:not_compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:5.64最长访问时间:40 ns
I/O 类型:COMMONJESD-30 代码:R-PDFP-F32
长度:20.825 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:128KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:DFP封装等效代码:FL32,.4
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified筛选级别:38535V;38534K;883S
座面最大高度:2.72 mm最大待机电流:0.0015 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.05 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
总剂量:100k Rad(Si) V宽度:10.415 mm
Base Number Matches:1

AT65609EHV-DJ40SR 数据手册

 浏览型号AT65609EHV-DJ40SR的Datasheet PDF文件第2页浏览型号AT65609EHV-DJ40SR的Datasheet PDF文件第3页浏览型号AT65609EHV-DJ40SR的Datasheet PDF文件第4页浏览型号AT65609EHV-DJ40SR的Datasheet PDF文件第5页浏览型号AT65609EHV-DJ40SR的Datasheet PDF文件第6页浏览型号AT65609EHV-DJ40SR的Datasheet PDF文件第7页 
Features  
Operating Voltage: 5V  
Access Time: 40 ns  
Very Low Power Consumption  
– Active: 275 mW (Max)  
– Standby: 10 mW (Typ)  
Wide Temperature Range: -55C to +125C  
400 Mils Width Packages: FP32 and SB32  
TTL Compatible Inputs and Outputs  
Asynchronous  
No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2@125°C  
Tested up to a Total Dose of 300 krads (Si) according to MIL STD 883 Method 1019  
ESD better than 4000V  
Rad. Tolerant  
128K x 8  
Deliveries at least equivalent to QML procurement according to MIL-PRF38535  
5-volts  
Description  
Very Low Power  
CMOS SRAM  
The AT65609EHV is a very low power CMOS static RAM organized as 131072 x 8  
bits. Utilizing an array of six transistors (6T) memory cells, the AT65609EHV com-  
bines an extremely low standby supply current with a fast access time at 40 ns over  
the full military temperature range. The high stability of the 6T cell provides excellent  
protection against soft errors due to noise.  
AT65609EHV  
The AT65609EHV is processed according to the methods of the latest revision of the  
MIL PRF 38535 or ESCC 9000.  
It is manufactured on the same process as the MH1RT RAD-hard sea of gates series.  
PRELIMINARY  
7832B–AERO–11/09  

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