Features
• Single-voltage Operation
– 5V Read
– 5V Programming
• Fast Read Access Time – 70 ns
• Internal Erase/Program Control
• Sector Architecture
– One 8K Word (16K Bytes) Boot Block with Programming Lockout
– Two 4K Word (8K Bytes) Parameter Blocks
– One 240K Word (480K Bytes) Main Memory Array Block
• Fast Sector Erase Time – 10 Seconds
• Byte-by-byte or Word-by-word Programming – 10 µs Typical
• Hardware Data Protection
• Data Polling for End of Program Detection
• Low Power Dissipation
– 50 mA Active Current
– 100 µA CMOS Standby Current
• Typical 10,000 Write Cycles
4-megabit
(512K x 8/
256K x 16)
Flash Memory
Description
AT49F4096A
The AT49F4096A is a 5-volt, 4-megabit Flash memory organized as 524,288 words of
8 bits each or 256K words of 16 bits each. Manufactured with Atmel’s advanced non-
volatile CMOS technology, the device offers access times to 70 ns with power
dissipation of just 275 mW. When deselected, the CMOS standby current is less than
100 µA.
The device contains a user-enabled “boot block” protection feature. The AT49F4096A
locates the boot block at lowest order addresses (“bottom boot”).
To allow for simple in-system reprogrammability, the AT49F4096A does not require
high-input voltages for programming. Reading data out of the device is similar to read-
ing from an EPROM; it has standard CE, OE and WE inputs to avoid bus contention.
Reprogramming the AT49F4096A is performed by first erasing a block of data and
then programming on a byte-by-byte or word-by-word basis.
Pin Configurations
Pin Name
A0 - A17
CE
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
OE
WE
RESET
I/O0 - I/O15
I/O15(A-1)
Data Inputs/Outputs
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE
NC
Selects Byte or Word Mode
No Connect
Rev. 1604E–FLASH–11/02
1