Datasheet > AT49F1025-35JC

AT49F1025-35JC

更新时间： 2024-11-07 23:32:47

品牌	Logo	应用领域
其他 - ETC		闪存内存集成电路异步传输模式 PC ATM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
15页	254K
描述
x16 Flash EEPROM

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中文翻译

获取价格

数据手册

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AT49F1025-35JC 数据手册

Features

• Single-voltage Operation

– 5V Read

– 5V Reprogramming

• Fast Read Access Time – 35 ns

• Internal Program Control and Timer

• 8K Word Boot Block with Lockout

• Fast Erase Cycle Time – 10 seconds

• Word-by-word Programming – 10 µs/Word Typical

• Hardware Data Protection

• Data Polling for End of Program Detection

• Small 10 x 14 mm VSOP Package

• Typical 10,000 Write Cycles

1-megabit

(64K x 16)

5-volt Only

Flash Memory

Description

The AT49F1024 and the AT49F1025 are 5-volt-only in-system Flash memories. Their

1 megabit of memory is organized as 65,536 words by 16 bits. Manufactured with

Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to

35 ns with power dissipation of just 275 mW over the commercial temperature range.

When the device is deselected, the CMOS standby current is less than 100 µA. The

only difference between the AT49F1024 and the AT49F1025 is the package.

AT49F1024

AT49F1025

To allow for simple in-system reprogrammability, the AT49F1024/1025 does not

require high-input voltages for programming. Five-volt-only commands determine the

(continued)

AT49F1024 VSOP Top View

Pin Configurations

Type 1

10 x 14 mm

Pin Name

A0 - A15

Function

Addresses

A10

GND

Chip Enable

Output Enable

Write Enable

A11

A12

A13

A14

A15

I/O0 - I/O15 Data Inputs/Outputs

VCC

No Connect

I/O0

I/O1

I/O2

I/O3

I/O4

I/O5

I/O6

I/O7

GND

I/O15

I/O14

I/O13

I/O12

I/O11

I/O10

I/O9

I/O8

AT49F1025

PLCC Top View

I/O12

39 A13

38 A12

37 A11

36 A10

35 A9

34 GND

33 NC

32 A8

31 A7

30 A6

29 A5

I/O11

I/O10

I/O9 10

I/O8 11

GND 12

NC 13

I/O7 14

I/O6 15

I/O5 16

I/O4 17

Rev. 0765I–05/01

12 3 4 5 6 7...15

中文翻译

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