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AT49F080-90TC PDF预览

AT49F080-90TC

更新时间: 2024-11-07 23:00:35
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存存储内存集成电路光电二极管异步传输模式ATM
页数 文件大小 规格书
12页 101K
描述
8-Megabit 1M x 8 5-volt Only Flash Memory

AT49F080-90TC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:PLASTIC, TSOP-40
针数:40Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.87Is Samacsys:N
最长访问时间:90 ns其他特性:HARDWARE DATA PROTECTION; BYTE PROGRAMMABLE
启动块:BOTTOM命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PDSO-G40
JESD-609代码:e0长度:18.4 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:3
功能数量:1部门数/规模:1,1
端子数量:40字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP40,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:5 V编程电压:5 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,1008K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.09 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:10 mmBase Number Matches:1

AT49F080-90TC 数据手册

 浏览型号AT49F080-90TC的Datasheet PDF文件第2页浏览型号AT49F080-90TC的Datasheet PDF文件第3页浏览型号AT49F080-90TC的Datasheet PDF文件第4页浏览型号AT49F080-90TC的Datasheet PDF文件第5页浏览型号AT49F080-90TC的Datasheet PDF文件第6页浏览型号AT49F080-90TC的Datasheet PDF文件第7页 
Features  
Single Voltage Operation  
– 5V Read  
– 5V Reprogramming  
Fast Read Access Time - 90 ns  
Internal Program Control and Timer  
16K bytes Boot Block With Lockout  
Fast Erase Cycle Time - 10 seconds  
Byte-By-Byte Programming - 10 µs/Byte Typical  
Hardware Data Protection  
DATA Polling For End Of Program Detection  
Low Power Dissipation  
– 50 mA Active Current  
– 100 µA CMOS Standby Current  
Typical 10,000 Write Cycles  
8-Megabit  
(1M x 8)  
5-volt Only  
Flash  
Description  
The AT49F080 is a 5-volt-only in-system Flash Memory device. Its 8-megabits of  
memory is organized as 1,024,576 words by 8-bits. Manufactured with Atmel’s  
advanced nonvolatile CMOS technology, the device offers access times to 90 ns with  
power dissipation of just 275 mW over the commercial temperature range. When the  
device is deselected, the CMOS standby current is less than 100 µA.  
Memory  
AT49F080  
AT49F080T  
The device contains a user-enabled “boot block” protection feature. Two versions of  
the feature are available: the AT49F080 locates the boot block at lowest order  
addresses (“bottom boot”); the AT49F080T locates it at highest order addresses (“top  
boot”).  
(continued)  
Pin Configurations  
SOIC  
Pin Name  
A0 - A19  
CE  
Function  
NC  
RESET  
A11  
A10  
A9  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
VCC  
CE  
2
Addresses  
3
A12  
A13  
A14  
A15  
A16  
A17  
A18  
A19  
NC  
4
Chip Enable  
Output Enable  
Write Enable  
Reset  
5
A8  
6
A7  
7
OE  
A6  
8
A5  
9
WE  
A4  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
NC  
RESET  
RDY/BUSY  
I/O0 - I/O7  
NC  
NC  
NC  
A3  
NC  
A2  
NC  
Ready/Busy Output  
Data Inputs/Outputs  
No Connect  
A1  
WE  
A0  
OE  
I/O0  
I/O1  
I/O2  
I/O3  
GND  
GND  
RDY/BUSY  
I/O7  
I/O6  
I/O5  
I/O4  
VCC  
CBGA Top View  
1
2
3
4
5
6
7
TSOP Top VIew  
Type 1  
A
B
C
D
E
F
A19  
A17  
A15  
A13  
A5 A8 A11 NC A12 A15 A17  
A4 A7 A10 VCC A13 NC A18  
A6 A9 RST CE A14 A16 A19  
A3 I/O1 NC VCC I/O4 I/O7 NC  
A2 A0 I/O3 GND I/O6 OE NC  
A1 I/O0 I/O2 GND I/O5 RY/BY WE  
NC  
1
3
5
7
9
40  
A18  
A16  
A14  
A12  
VCC  
2
39  
37  
35  
NC  
WE  
38  
36  
34  
32  
OE  
4
6
RDY/BUSY  
I/O6  
I/O7  
8
33  
31  
29  
27  
25  
23  
I/O5  
CE  
NC  
RESET  
A11  
I/O4  
GND  
I/O3  
I/O1  
A0  
10  
VCC  
11  
13  
15  
17  
19  
30  
28  
26  
24  
22  
12  
14  
GND  
I/O2  
I/O0  
A1  
A10  
A8  
A9  
A7  
16  
18  
0584B-A–8/97  
A6  
A5  
A2  
A4  
20  
21  
A3  

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