Datasheet > AT49BV001-12VJ

AT49BV001-12VJ

更新时间： 2024-11-25 03:43:35

品牌	Logo	应用领域
爱特美尔 - ATMEL		光电二极管
页数	文件大小	规格书
25页	441K
描述
Flash, 128KX8, 120ns, PDSO32, 8 X 14 MM, PLASTIC, MO-142BA, TSOP1-32

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AT49BV001-12VJ 数据手册

Features

• Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV)

• Fast Read Access Time – 70 ns

• Internal Program Control and Timer

• Sector Architecture

– One 16-Kbyte Boot Block with Programming Lockout

– Two 8-Kbyte Parameter Blocks

– Two Main Memory Blocks (32K, 64K Bytes)

• Fast Erase Cycle Time – 10 Seconds

• Byte-by-byte Programming – 30 µs/Byte Typical

• Hardware Data Protection

• DATA Polling for End of Program Detection

• Low Power Dissipation

1-megabit

(128K x 8)

– 25 mA Active Current

– 50 µA CMOS Standby Current

Single 2.7-volt

Battery-Voltage^™

Flash Memory

• Typical 10,000 Write Cycles

Description

The AT49BV/LV001(N)(T) is a 3-volt-only in-system reprogrammable Flash memory.

Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with

Atmel’s advanced nonvolatile CMOS technology, the device offers access times to

70 ns with power dissipation of just 90 mW over the commercial temperature range.

When the device is deselected, the CMOS standby current is less than 50 µA. For the

AT49BV001

AT49LV001

DIP Top View

Pin Configurations

AT49BV001N

AT49LV001N

AT49BV001T

AT49LV001T

AT49BV001NT

AT49LV001NT

Not Recommended

Pin Name

A0 - A16

Function

*RESET

A16

A15

A12

32 VCC

31 WE

30 NC

Addresses

A14

28 A13

27 A8

Chip Enable

Output Enable

Write Enable

RESET

26 A9

25 A11

24 OE

23 A10

22 CE

21 I/O7

20 I/O6

19 I/O5

18 I/O4

17 I/O3

A2 10

A1 11

A0 12

RESET

I/O0 - I/O7

I/O0 13

I/O1 14

I/O2 15

GND 16

Data Inputs/Outputs

Don’t Connect

No Connect

VSOP Top View (8 x 14mm) or

for New Design

Contact Atmel to discuss

the latest design in trends

and options

TSOP Top View (8 x 20mm) – Type 1

PLCC Top View

A11

A10

A13

A14

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

29 A14

28 A13

27 A8

26 A9

25 A11

24 OE

23 A10

22 CE

21 I/O7

VCC

*RESET

A16

A15

A12

A2 10

A1 11

A0 12

I/O0 13

1110C–FLASH–9/03

Note:

*This pin is a DC on the AT49BV001N(T) and AT49LV001N(T).

12 3 4 5 6 7...25

中文翻译

下载PDF

与AT49BV001-12VJ相关器件

型号	品牌	获取价格	描述	数据表
AT49BV001-12VL	ATMEL	获取价格	Flash, 128KX8, 120ns, PDSO32, 8 X 14 MM, PLASTIC, MO-142BA, TSOP1-32
AT49BV001-90JC	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT49BV001-90JI	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT49BV001-90JJ	ATMEL	获取价格	Flash, 128KX8, 90ns, PQCC32, PLASTIC, MS-016AE, LCC-32
AT49BV001-90JL	ATMEL	获取价格	Flash, 128KX8, 90ns, PQCC32, PLASTIC, MS-016AE, LCC-32
AT49BV001-90PC	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT49BV001-90PI	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT49BV001-90PJ	ATMEL	获取价格	Flash, 128KX8, 90ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32
AT49BV001-90PL	ATMEL	获取价格	Flash, 128KX8, 90ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32
AT49BV001-90TC	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-Volt Battery-Voltage Flash Memory

与AT49BV001-12VJ相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

AT49BV001-12VJ

AT49BV001-12VJ 数据手册

与AT49BV001-12VJ相关器件

与AT49BV001-12VJ相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AT49BV001-12VJ

AT49BV001-12VJ 数据手册

与AT49BV001-12VJ相关器件

与AT49BV001-12VJ相关文章

您还可以找

您在本页遇到什么问题？