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AT49BV001AN-55VU PDF预览

AT49BV001AN-55VU

更新时间： 2024-11-24 20:04:07
品牌 Logo 应用领域
爱特美尔 - ATMEL 光电二极管内存集成电路
页数 文件大小 规格书
18页 177K
描述
Flash, 128KX8, 55ns, PDSO32, 8 X 14 MM, GREEN, PLASTIC, MO-142BA, VSOP-32

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中文翻译

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AT49BV001AN-55VU 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：8 X 14 MM, GREEN, PLASTIC, MO-142BA, VSOP-32
针数：32Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.84最长访问时间：55 ns
启动块：BOTTOM命令用户界面：YES
数据轮询：YESJESD-30 代码：R-PDSO-G32
JESD-609代码：e3长度：12.4 mm
内存密度：1048576 bit内存集成电路类型：FLASH
内存宽度：8湿度敏感等级：3
功能数量：1部门数/规模：1,2,1,1
端子数量：32字数：131072 words
字数代码：128000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：128KX8封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装等效代码：TSSOP32,.56,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
电源：3/3.3 V编程电压：2.7 V
认证状态：Not Qualified座面最大高度：1.2 mm
部门规模：16K,8K,32K,64K最大待机电流：0.00005 A
子类别：Flash Memories最大压摆率：0.05 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40切换位：YES
类型：NOR TYPE宽度：8 mm
Base Number Matches：1

AT49BV001AN-55VU 数据手册

 浏览型号AT49BV001AN-55VU的Datasheet PDF文件第2页浏览型号AT49BV001AN-55VU的Datasheet PDF文件第3页浏览型号AT49BV001AN-55VU的Datasheet PDF文件第4页浏览型号AT49BV001AN-55VU的Datasheet PDF文件第5页浏览型号AT49BV001AN-55VU的Datasheet PDF文件第6页浏览型号AT49BV001AN-55VU的Datasheet PDF文件第7页 
Features  
• Single Supply for Read and Write: 2.7 to 3.6V  
• Fast Read Access Time – 55 ns  
• Internal Program Control and Timer  
• Sector Architecture  
– One 16K Bytes Boot Block with Programming Lockout  
– Two 8K Bytes Parameter Blocks  
– Two Main Memory Blocks (32K Bytes, 64K Bytes)  
• Fast Erase Cycle Time – 3 Seconds  
• Byte-by-Byte Programming – 30 µs/Byte Typical  
• Hardware Data Protection  
1-megabit  
(128K x 8)  
Single 2.7-volt  
Battery-Voltage  
Flash Memory  
• DATA Polling for End of Program Detection  
• Low Power Dissipation  
– 15 mA Active Current  
– 50 µA CMOS Standby Current  
• Typical 10,000 Write Cycles  
• Green (Pb/Halide-free) Packaging Option  
1. Description  
The AT49BV001A(N)(T) is a 2.7-volt-only in-system reprogrammable Flash Memory.  
Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with  
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to  
55 ns with power dissipation of just 54 mW over the industrial temperature range.  
AT49BV001A  
AT49BV001AN  
AT49BV001AT  
AT49BV001ANT  
When the device is deselected, the CMOS standby current is less than 50 µA. For the  
AT49BV001AN(T), pin 1 for the PLCC package and pin 9 for the TSOP package are  
no connect pins. To allow for simple in-system reprogrammability, the  
AT49BV001A(N)(T) does not require high input voltages for programming. Five-volt-  
only commands determine the read and programming operation of the device. Read-  
ing data out of the device is similar to reading from an EPROM; it has standard CE,  
OE, and WE inputs to avoid bus contention. Reprogramming the AT49BV001A(N)(T)  
is performed by erasing a block of data and then programming on a byte by byte  
basis. The byte programming time is a fast 30 µs. The end of a program cycle can be  
optionally detected by the DATA polling feature. Once the end of a byte program cycle  
has been detected, a new access for a read or program can begin. The typical num-  
ber of program and erase cycles is in excess of 10,000 cycles.  
The device is erased by executing the erase command sequence; the device inter-  
nally controls the erase operations. There are two 8K byte parameter block sections,  
two main memory blocks, and one boot block.  
The device has the capability to protect the data in the boot block; this feature is  
enabled by a command sequence. The 16K-byte boot block section includes a repro-  
gramming lock out feature to provide data integrity. The boot sector is designed to  
contain user secure code, and when the feature is enabled, the boot sector is pro-  
tected from being reprogrammed.  
In the AT49BV001AN(T), once the boot block programming lockout feature  
is enabled, the contents of the boot block are permanent and cannot be changed.  
In the AT49BV001A(T), once the boot block programming lockout feature is enabled,  
the contents of the boot block cannot be changed with input voltage levels of 5.5 volts  
or less.  
3364D–FLASH–3/05  
1234567...18

中文翻译

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AT49BV001AN-55VU 替代型号

型号 品牌 替代类型 描述 数据表
AT49BV001A-55VI ATMEL

完全替代

 1-megabit (128K x 8) Single 2.7-volt Battery-
AT49BV001AN-55VI ATMEL

完全替代

 1-megabit (128K x 8) Single 2.7-volt Battery-

与AT49BV001AN-55VU相关器件

型号 品牌 获取价格 描述 数据表
AT49BV001ANT ATMEL

获取价格

 		1-megabit (128K x 8) Single 2.7-volt Battery-
AT49BV001ANT-55JI ATMEL

获取价格

 		1-megabit (128K x 8) Single 2.7-volt Battery-
AT49BV001ANT-55JU ATMEL

获取价格

 		Flash, 128KX8, 55ns, PQCC32, GREEN, PLASTIC, MS-016AE, LCC-32
AT49BV001ANT-55TI ATMEL

获取价格

 		1-megabit (128K x 8) Single 2.7-volt Battery-
AT49BV001ANT-55TJ ATMEL

获取价格

 		Flash, 128KX8, 55ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
AT49BV001ANT-55TU ATMEL

获取价格

 		Flash, 128KX8, 55ns, PDSO32, 8 X 20 MM, GREEN, PLASTIC, MO-142BD, TSOP1-32
AT49BV001ANT-55VI ATMEL

获取价格

 		1-megabit (128K x 8) Single 2.7-volt Battery-
AT49BV001ANT-55VJ ATMEL

获取价格

 		Flash, 128KX8, 55ns, PDSO32, 8 X 14 MM, PLASTIC, MO-142BA, VSOP-32
AT49BV001ANT-55VU ATMEL

获取价格

 		Flash, 128KX8, 55ns, PDSO32, 8 X 14 MM, GREEN, PLASTIC, MO-142BA, VSOP-32
AT49BV001AT ATMEL

获取价格

 		1-megabit (128K x 8) Single 2.7-volt Battery-

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