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AT49BV001A PDF预览

AT49BV001A

更新时间: 2024-11-23 22:25:47
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存电池
页数 文件大小 规格书
18页 179K
描述
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage⑩ Flash Memory

AT49BV001A 数据手册

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Features  
Single Supply for Read and Write: 2.7 to 3.6V  
Fast Read Access Time – 55 ns  
Internal Program Control and Timer  
Sector Architecture  
– One 16K Bytes Boot Block with Programming Lockout  
– Two 8K Bytes Parameter Blocks  
– Two Main Memory Blocks (32K Bytes, 64K Bytes)  
Fast Erase Cycle Time – 3 Seconds  
Byte-by-Byte Programming – 30 µs/Byte Typical  
Hardware Data Protection  
1-megabit  
(128K x 8)  
DATA Polling for End of Program Detection  
Low Power Dissipation  
– 15 mA Active Current  
– 50 µA CMOS Standby Current  
Single 2.7-volt  
Battery-Voltage™  
Flash Memory  
Typical 10,000 Write Cycles  
Description  
The AT49BV001A(N)(T) is a 2.7-volt-only in-system reprogrammable Flash Memory.  
Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with  
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to  
55 ns with power dissipation of just 54 mW over the industrial temperature range.  
AT49BV001A  
AT49BV001AN  
AT49BV001AT  
AT49BV001ANT  
Pin Configurations  
VSOP Top View (8 x 14 mm) or  
TSOP Top View (8 x 20 mm)  
Type 1  
Pin Name  
A0 - A16  
CE  
Function  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
RESET  
A11  
A9  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
2
A10  
CE  
OE  
A8  
3
A13  
A14  
NC  
4
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
WE  
5
6
WE  
7
RESET  
I/O0 - I/O7  
NC  
VCC  
*RESET  
A16  
A15  
A12  
A7  
8
9
Data Inputs/Outputs  
No Connect  
10  
11  
12  
13  
14  
15  
16  
A6  
A1  
PLCC Top View  
A5  
A2  
A4  
A3  
A7  
5
6
7
8
9
29 A14  
28 A13  
27 A8  
26 A9  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O7  
A6  
A5  
A4  
A3  
A2 10  
A1 11  
A0 12  
I/O0 13  
Rev. 3364C–FLASH–9/03  
Note:  
*This pin is a NC on the AT49BV001AN(T).  

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