Datasheet > AT45DB161E

AT45DB161E

更新时间： 2024-11-14 14:58:07

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
77页	1999K
描述
16Mbit, 2.3V to 3.6V Range SPI Serial Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AT45DB161E 数据手册

Datasheet

AT45DB161E

16-Mbit DataFlash (with Extra 512-kbits) 2.3 V or 2.5 V Minimum SPI Serial Flash Memory

Features

• Single 2.3 V - 3.6 V or 2.5 V - 3.6 V supply

• Serial Peripheral Interface (SPI) compatible

• Supports SPI modes 0 and 3

• Supports RapidS™ operation

• Continuous read capability through entire array

• Up to 85 MHz

• Low-power read option up to 15 MHz

• Clock-to-output time (t_V) of 6 ns maximum

• User-configurable page size

• 512 bytes per page

• 528 bytes per page (default)

• Page size can be factory pre-configured for 512 bytes

• Two fully independent SRAM data buffers (512/528 bytes)

• Allows receiving data while reprogramming the main memory array

• Flexible programming options

• Byte/Page Program (1 to 512/528 bytes) directly into main memory

• Buffer Write

• Buffer to Main Memory Page Program

• Flexible erase options

• Page Erase (512/528 bytes)

• Block Erase (4 kB)

• Sector Erase (128 kB)

• Chip Erase (16 Mbits)

• Program and Erase Suspend/Resume

• Advanced hardware and software data protection features

• Individual sector protection

• Individual sector lockdown to make any sector permanently read-only

• 128-byte, One-Time Programmable (OTP) Security Register

• 64 bytes factory programmed with a unique identifier

• 64 bytes user programmable

• Hardware and software controlled reset options

• JEDEC Standard Manufacturer and Device ID Read

• Low-power dissipation

• 400 nA Ultra-Deep Power-Down current (typical)

• 5 µA Deep Power-Down current (typical)

• 25 µA Standby current (typical)

• 7 mA Active Read current (typical @ 15 MHz))

• Endurance: 100,000 program/erase cycles per page minimum

• Data retention: 20 years

• Complies with full industrial temperature range

• Green (Pb/Halide-free/RoHS compliant) packaging options

• 8-lead SOIC (0.150" wide and 0.208" wide)

• 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)

• 11-ball Wafer Level Chip Scale Package

• Die in Wafer Form (contact factory for availability)

DS-AT45DB161E-8782 Rev. P

1/27/23

Page 1

12 3 4 5 6 7...77

中文翻译

下载PDF

与AT45DB161E相关器件

型号	品牌	获取价格	描述	数据表
AT45DB161E-CCDH-B	ATMEL	获取价格	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory
AT45DB161E-CCDH-T	ATMEL	获取价格	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory
AT45DB161E-CCDH-Y	ATMEL	获取价格	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory
AT45DB161E-CCDU-B	ATMEL	获取价格	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory
AT45DB161E-CCDU-T	ATMEL	获取价格	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory
AT45DB161E-CCDU-Y	ATMEL	获取价格	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory
AT45DB161E-CCFH-B	ATMEL	获取价格	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory
AT45DB161E-CCFH-T	ATMEL	获取价格	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory
AT45DB161E-CCFH-Y	ATMEL	获取价格	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory
AT45DB161E-CCFU-B	ATMEL	获取价格	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory

与AT45DB161E相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

25
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

10
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

11
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

AT45DB161E

AT45DB161E 数据手册

与AT45DB161E相关器件

与AT45DB161E相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AT45DB161E

AT45DB161E 数据手册

与AT45DB161E相关器件

与AT45DB161E相关文章

您还可以找

您在本页遇到什么问题？