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AT45DB161E-MHD-T PDF预览

AT45DB161E-MHD-T

更新时间: 2024-11-14 02:54:47
品牌 Logo 应用领域
DIALOG 时钟光电二极管内存集成电路
页数 文件大小 规格书
80页 1368K
描述
16-Mbit DataFlash (with Extra 512-kbits) 2.3 V or 2.5 V Minimum SPI Serial Flash Memory

AT45DB161E-MHD-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SON
包装说明:HVSON, SOLCC8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:10 weeks
风险等级:7.73最大时钟频率 (fCLK):85 MHz
数据保留时间-最小值:20耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-N8JESD-609代码:e4
长度:6 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:1
湿度敏感等级:3功能数量:1
端子数量:8字数:16777216 words
字数代码:16000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:16MX1封装主体材料:PLASTIC/EPOXY
封装代码:HVSON封装等效代码:SOLCC8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:0.6 mm
串行总线类型:SPI最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.026 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED类型:NOR TYPE
宽度:5 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

AT45DB161E-MHD-T 数据手册

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16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory
AT45DB161E-SDU-Y ATMEL

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