Datasheet > AT45DB161D_13

AT45DB161D_13

更新时间： 2022-10-12 13:38:47

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
51页	2128K
描述
16-megabit 2.5V or 2.7V DataFlash

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数据手册

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AT45DB161D_13 数据手册

Program and Erase Commands

7.1

Buffer Write

Data can be clocked in from the input pin (SI) into either buffer 1 or buffer 2. To load data into the standard Atmel^®

DataFlash buffer (528-bytes), a 1-byte opcode, 84H for buffer 1 or 87H for buffer 2, must be clocked into the

device, followed by three address bytes comprised of 14 don’t care bits and 10 buffer address bits (BFA9 - BFA0).

The 10 buffer address bits specify the first byte in the buffer to be written. To load data into the binary buffers (512-

bytes each), a 1-byte opcode 84H for buffer 1 or 87H for buffer 2, must be clocked into the device, followed by

three address bytes comprised of 15 don’t care bits and nine buffer address bits (BFA8 - BFA0). The nine buffer

address bits specify the first byte in the buffer to be written. After the last address byte has been clocked into the

device, data can then be clocked in on subsequent clock cycles. If the end of the data buffer is reached, the device

will wrap around back to the beginning of the buffer. Data will continue to be loaded into the buffer until a low-to-

high transition is detected on the CS pin.

7.2

Buffer to Main Memory Page Program with Built-in Erase

Data written into either buffer 1 or buffer 2 can be programmed into the main memory. A 1-byte opcode, 83H for

buffer 1 or 86H for buffer 2, must be clocked into the device. For the standard DataFlash page size (528-bytes), the

opcode must be followed by three address bytes consist of two don’t care bits, 12 page address bits (PA11 - PA0)

that specify the page in the main memory to be written and 10 don’t care bits. To perform a buffer to main memory

page program with built-in erase for the binary page size (512-bytes), the opcode 83H for buffer 1 or 86H for buffer

2, must be clocked into the device followed by three address bytes consisting of three don’t care bits 12 page

address bits (A20 - A9) that specify the page in the main memory to be written and nine don’t care bits. When a

low-to-high transition occurs on the CS pin, the part will first erase the selected page in main memory (the erased

state is a logic 1) and then program the data stored in the buffer into the specified page in main memory. Both the

erase and the programming of the page are internally self-timed and should take place in a maximum time of t_EP.

During this time, the status register and the RDY/BUSY pin will indicate that the part is busy.

7.3

Buffer to Main Memory Page Program without Built-in Erase

A previously-erased page within main memory can be programmed with the contents of either buffer 1 or buffer 2.

A 1-byte opcode, 88H for buffer 1 or 89H for buffer 2, must be clocked into the device. For the standard DataFlash

page size (528-bytes), the opcode must be followed by three address bytes consist of two don’t care bits, 12 page

address bits (PA11 - PA0) that specify the page in the main memory to be written and 10 don’t care bits. To

perform a buffer to main memory page program without built-in erase for the binary page size (512-bytes), the

opcode 88H for buffer 1 or 89H for buffer 2, must be clocked into the device followed by three address bytes

consisting of three don’t care bits, 12 page address bits (A20 - A9) that specify the page in the main memory to be

written and nine don’t care bits. When a low-to-high transition occurs on the CS pin, the part will program the data

stored in the buffer into the specified page in the main memory. It is necessary that the page in main memory that

is being programmed has been previously erased using one of the erase commands (Page Erase or Block Erase).

The programming of the page is internally self-timed and should take place in a maximum time of t_P. During this

time, the status register and the RDY/BUSY pin will indicate that the part is busy.

7.4

Page Erase

The Page Erase command can be used to individually erase any page in the main memory array allowing the

Buffer to Main Memory Page Program to be utilized at a later time. To perform a page erase in the standard

DataFlash page size (528-bytes), an opcode of 81H must be loaded into the device, followed by three address

bytes comprised of two don’t care bits, 12 page address bits (PA11 - PA0) that specify the page in the main

memory to be erased and 10 don’t care bits. To perform a page erase in the binary page size (512-bytes), the

opcode 81H must be loaded into the device, followed by three address bytes consist of three don’t care bits, 12

Atmel AT45DB161D

3500N–DFLASH–05/10

1...5 6 789 10 11...51

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与AT45DB161D_13相关器件

型号	品牌	描述	获取价格	数据表
AT45DB161D-CU	ATMEL	16-megabit 2.5-volt or 2.7-volt DataFlash	获取价格
AT45DB161D-MU	ATMEL	16-megabit 2.5-volt or 2.7-volt DataFlash	获取价格
AT45DB161D-MU-2.5	ATMEL	16-megabit 2.5-volt or 2.7-volt DataFlash	获取价格
AT45DB161D-MU-SL954	ATMEL	16-megabit 2.5-volt or 2.7-volt DataFlash	获取价格
AT45DB161D-MU-SL955	ATMEL	16-megabit 2.5-volt or 2.7-volt DataFlash	获取价格
AT45DB161D-SS	ATMEL	One mechanical button switch Three LEDs Four expansion headers	获取价格
AT45DB161D-SU	ATMEL	16-megabit 2.5-volt or 2.7-volt DataFlash	获取价格
AT45DB161D-SU-2.5	ATMEL	16-megabit 2.5-volt or 2.7-volt DataFlash	获取价格
AT45DB161D-SU-SL954	ATMEL	16-megabit 2.5-volt or 2.7-volt DataFlash	获取价格
AT45DB161D-SU-SL955	ATMEL	16-megabit 2.5-volt or 2.7-volt DataFlash	获取价格
AT45DB161D-TU	ATMEL	16-megabit 2.5-volt or 2.7-volt DataFlash	获取价格
AT45DB161D-TU-2.5	ATMEL	16-megabit 2.5-volt or 2.7-volt DataFlash	获取价格
AT45DB161E	ATMEL	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory	获取价格
AT45DB161E	RENESAS	16Mbit, 2.3V to 3.6V Range SPI Serial Flash Memory	获取价格
AT45DB161E-CCDH-B	ATMEL	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory	获取价格
AT45DB161E-CCDH-T	ATMEL	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory	获取价格
AT45DB161E-CCDH-Y	ATMEL	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory	获取价格
AT45DB161E-CCDU-B	ATMEL	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory	获取价格
AT45DB161E-CCDU-T	ATMEL	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory	获取价格
AT45DB161E-CCDU-Y	ATMEL	16-Mbits DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory	获取价格

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